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Douglas J. Paul

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cond-mat.mes-hall cond-mat.mtrl-sci physics.optics cond-mat.other physics.app-ph

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preprint2021arXiv

A MEMS gravimeter with multi-axis gravitational sensitivity

A single-axis Microelectromechanical system gravimeter has recently been developed at the University of Glasgow. The sensitivity and stability of this device was demonstrated by measuring the Earth tides. The success of this device was enabled in part by its extremely low resonant frequency. This low frequency was achieved with a geometric anti-spring design, fabricated using well-established photolithography and dry etch techniques. Analytical models can be used to calculate the results of these non-linear oscillating systems, but the power of finite element analysis has not been fully utilised to explore the parameter space before now. In this article, the results of previous analytical solutions are replicated using finite element models, before applying the same techniques to optimise the design of the gravimeter. These computer models provide the ability to investigate the effect of the fabrication material of the device: anisotropic <100> crystalline silicon. This is a parameter that is difficult to investigate analytically, but finite element modelling is demonstrated here to provide accurate predictions of real gravimeter behaviour by taking anisotropy into account. The finite element models are then used to demonstrate the design of a three-axis gravimeter enabling the gravity tensor to be measured - a significantly more powerful surveying tool than the original single-axis device.

preprint2016arXiv

Optical Activation of Germanium Plasmonic Antennas in the Mid Infrared

Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination red-shifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas.

preprint2016arXiv

Tunability and Losses of Mid-infrared Plasmonics in Heavily Doped Germanium Thin Films

Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate heavily n-type doped germanium epilayers grown on different substrates, in-situ doped in the $10^{17}$ to $10^{19}$ cm$^{-3}$ range, by infrared spectroscopy, first principle calculations, pump-probe spectroscopy and dc transport measurements to determine the relation between plasma edge and carrier density and to quantify mid-infrared plasmon losses. We demonstrate that the unscreened plasma frequency can be tuned in the 400 - 4800 cm$^{-1}$ range and that the average electron scattering rate, dominated by scattering with optical phonons and charged impurities, increases almost linearly with frequency. We also found weak dependence of losses and tunability on the crystal defect density, on the inactivated dopant density and on the temperature down to 10 K. In films where the plasma was optically activated by pumping in the near-infrared, we found weak but significant dependence of relaxation times on the static doping level of the film. Our results suggest that plasmon decay times in the several-picosecond range can be obtained in n-type germanium thin films grown on silicon substrates hence allowing for underdamped mid-infrared plasma oscillations at room temperature.

preprint2015arXiv

Mid-Infrared Plasmonic Platform based on Heavily Doped Epitaxial Ge-on-Si: Retrieving the Optical Constants of Thin Ge Epilayers

The n-type Ge-on-Si epitaxial material platform enables a novel paradigm for plasmonics in the mid-infrared, prompting the future development of lab-on-a-chip and subwavelength vibrational spectroscopic sensors. In order to exploit this material, through proper electrodynamic design, it is mandatory to retrieve the dielectric constants of the thin Ge epilayers with high precision due to the difference from bulk Ge crystals. Here we discuss the procedure we have employed to extract the real and imaginary part of the dielectric constants from normal incidence reflectance measurements, by combining the standard multilayer fitting procedure based on the Drude model with Kramers-Kronig transformations of absolute reflectance data in the zero-transmission range of the thin film.