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Dongzhe Li

Dongzhe Li contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2025arXiv

No Vision, No Wearables: 5G-based 2D Human Pose Recognition with Integrated Sensing and Communications

With the increasing maturity of contactless human pose recognition (HPR) technology, indoor interactive applications have raised higher demands for natural, controller-free interaction methods. However, current mainstream HPR solutions relying on vision or radio-frequency (RF) (including WiFi, radar) still face various challenges in practical deployment, such as privacy concerns, susceptibility to occlusion, dedicated equipment and functions, and limited sensing resolution and range. 5G-based integrated sensing and communication (ISAC) technology, by merging communication and sensing functions, offers a new approach to address these challenges in contactless HPR. We propose a practical 5G-based ISAC system capable of inferring 2D HPR from uplink sounding reference signals (SRS). Specifically, rich features are extracted from multiple domains and employ an encoder to achieve unified alignment and representation in a latent space. Subsequently, low-dimensional features are fused to output the human pose state. Experimental results demonstrate that in typical indoor environments, our proposed 5G-based ISAC HPR system significantly outperforms current mainstream baseline solutions in HPR performance, providing a solid technical foundation for universal human-computer interaction.

preprint2022arXiv

Negative Differential Resistance in Spin-Crossover Molecular Devices

We demonstrate, based on low-temperature scanning tunneling microscopy (STM) and spectroscopy, a pronounced negative differential resistance (NDR) in spin-crossover (SCO) molecular devices, where a Fe$^{\text{II}}$ SCO molecule is deposited on surfaces. The STM measurements reveal that the NDR is robust with respect to substrate materials, temperature, and the number of SCO layers. This indicates that the NDR is intrinsically related to the electronic structure of the SCO molecule. Experimental results are supported by density functional theory (DFT) with non-equilibrium Green's functions (NEGF) calculations and a generic theoretical model. While the DFT+NEGF calculations reproduce NDR for a special atomically-sharp STM tip, the effect is attributed to the energy-dependent tip density of states rather than the molecule itself. We, therefore, propose a Coulomb blockade model involving three molecular orbitals with very different spatial localization as suggested by the molecular electronic structure.

preprint2022arXiv

Proposal for all-electrical spin manipulation and detection for a single molecule on boron-substituted graphene

All-electrical writing and reading of spin states attract considerable attention for their promising applications in energy-efficient spintronics devices. Here we show, based on rigorous first-principles calculations, that the spin properties can be manipulated and detected in molecular spinterfaces, where an iron tetraphenyl porphyrin (FeTPP) molecule is deposited on boron-substituted graphene (B-G). Notably, a reversible spin switching between the $S=1$ and $S=3/2$ states is achieved by a gate electrode. We can trace the origin to a strong hybridization between the Fe-$d_{{z}^2}$ and B-$p_z$ orbitals. Combining density functional theory with nonequilibrium Green's function formalism, we propose an experimentally feasible 3-terminal setup to probe the spin state. Furthermore, we show how the in-plane quantum transport for the B-G, which is non-spin polarized, can be modified by FeTPP, yielding a significant transport spin polarization near the Fermi energy ($>10\%$ for typical coverage). Our work paves the way to realize all-electrical spintronics devices using molecular spinterfaces.

preprint2020arXiv

Giant anisotropic magnetoresistance through a tilted molecular $π$-orbital

Anisotropic magnetoresistance (AMR), originating from spin-orbit coupling (SOC), is the sensitivity of the electrical resistance in magnetic systems to the direction of spin magnetization. Although this phenomenon has been experimentally reported for several nanoscale junctions, a clear understanding of the physical mechanism behind it is still elusive. Here we discuss a novel concept based on orbital symmetry considerations to attain a significant AMR of up to 95\% for a broad class of $π$-type molecular spin-valves. It is illustrated at the benzene-dithiolate molecule connected between two monoatomic nickel electrodes. We find that SOC opens, via spin-flip events at the ferromagnet-molecule interface, a new conduction channel, which is fully blocked by symmetry without SOC. Importantly, the interplay between main and new transport channels turns out to depend strongly on the magnetization direction in the nickel electrodes due to the tilting of molecular orbital. Moreover, due to multi-band quantum interference, appearing at the band edge of nickel electrodes, a transmission drop is observed just above the Fermi energy. Altogether, these effects lead to a significant AMR around the Fermi level, which even changes a sign. Our theoretical understanding, corroborated in terms of \textit{ab initio} calculations and simplified analytical models, reveals the general principles for an efficient realization of AMR in molecule-based spintronic devices.