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Researcher profile

Donguk Nam

Donguk Nam contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.optics

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Published work

2 published item(s)

preprint2022arXiv

Second-harmonic generation in germanium-on-insulator from visible to telecom wavelengths

The second-order $χ^{2}$ process underpins many important nonlinear optical applications in the field of classical and quantum optics. Generally, the $χ^{2}$ process manifests itself only in a non-centrosymmetric dielectric medium via an anharmonic electron oscillation when driven by an intense optical field. Due to inversion symmetry, group-IV semiconductors like silicon (Si) and germanium (Ge) are traditionally not considered as ideal candidates for second-order nonlinear optics applications. Here, we report the experimental observation of the second-harmonic generation (SHG) in a Ge-on-insulator (GOI) sample under femtosecond optical pumping. Specially, we report the first-time measurement of the SHG signal from a GOI sample in the telecom S-band by pumping at $\sim$$3000$ nm.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strain effects on Phase-Filling Singularities in Highly Doped n-Type Ge

Recently, Chi Xu et al. predicted the phase-filling singularities (PFS) in the optical dielectric function (ODF) of the highly doped $n$-type Ge and confirmed in experiment the PFS associated $E_{1}+Δ_{1}$ transition by advanced \textit{in situ} doping technology [Phys. Rev. Lett. 118, 267402 (2017)], but the strong overlap between $E_{1}$ and $E_{1}+Δ_{1}$ optical transitions made the PFS associated $E_{1}$ transition that occurs at the high doping concentration unobservable in their measurement. In this work, we investigate the PFS of the highly doped n-type Ge in the presence of the uniaxial and biaxial tensile strain along [100], [110] and [111] crystal orientation. Compared with the relaxed bulk Ge, the tensile strain along [100] increases the energy separation between the $E_{1}$ and $E_{1}+Δ_{1}$ transition, making it possible to reveal the PFS associated $E_{1}$ transition in optical measurement. Besides, the application of tensile strain along [110] and [111] offers the possibility of lowering the required doping concentration for the PFS to be observed, resulting in new additional features associated with $E_{1}+Δ_{1}$ transition at inequivalent $L$-valleys. These theoretical predications with more distinguishable optical transition features in the presence of the uniaxial and biaxial tensile strain can be more conveniently observed in experiment, providing new insights into the excited states in heavily doped semiconductors.

0 citations0 reviewsNo code linkedOpen access