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Dongqi Zheng

Dongqi Zheng contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

When Few Steps Are Enough: Training-Free Acceleration of Identity-Preserved Generation

Identity-preserved image generation is typically built on many-step diffusion backbones, making personalized generation expensive at deployment time. We show that this cost is often unnecessary for identity-conditioned FLUX generation. A frozen InfuseNet identity adapter trained with dev transfers directly to the distilled schnell backbone without retraining. This two-line replacement -- changing the backbone path and disabling classifier-free guidance -- reduces latency by 5.9x while improving ArcFace identity similarity by +0.028 and lpips by -0.016 over the standard 28-step dev baseline. To explain why this works, we analyze the denoising trajectory and find that identity fidelity enters an early effective regime, often within 4-8 steps, while later steps primarily refine visual detail, sharpness, and contrast. Adapter ablations confirm that identity formation depends on the identity adapter, while attention-stream norm probes suggest that the relative conditioning contribution decreases as sampling proceeds. Preliminary style-adapter and object-adapter sweeps on SDXL and SD1.5 show similar diminishing returns after intermediate steps. These results position distilled backbone replacement as a simple, training-free strategy for improving the efficiency-fidelity tradeoff of identity-preserved generation.

preprint2020arXiv

Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors?

In this work, we demonstrate enhancement-mode field-effect transistors by atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to be critical on the materials and electron transport of In2O3. Controllable thickness of In2O3 at atomic scale enables the design of sufficient 2D carrier density in the In2O3 channel integrated with the conventional dielectric. The threshold voltage and channel carrier density are found to be considerably tuned by channel thickness. Such phenomenon is understood by the trap neutral level (TNL) model where the Fermi-level tends to align deeply inside the conduction band of In2O3 and can be modulated to the bandgap in atomic layer thin In2O3 due to quantum confinement effect, which is confirmed by density function theory (DFT) calculation. The demonstration of enhancement-mode amorphous In2O3 transistors suggests In2O3 is a competitive channel material for back-end-of-line (BEOL) compatible transistors and monolithic 3D integration applications.