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Researcher profile

Donghai Wei

Donghai Wei contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.comp-ph

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Published work

3 published item(s)

preprint2022arXiv

Electrically driven robust tuning of lattice thermal conductivity

Two-dimensional (2D) materials represented by graphene stand out in future electrical industry and have been widely studied. As a commonly existing factor in electronic devices, the electric field has been extensively utilized to modulate the performance. However, how the electric field regulates thermal transport is rarely studied. Herein, we investigate the modulation of thermal transport properties by applying the external electric field ranging from 0 to 0.4 VA-1, with bilayer graphene, monolayer silicene, and germanene as study cases. The monotonic decreasing trend of thermal conductivity of all the three materials is revealed. The significant effect on the scattering rate is found to be responsible for the decreased thermal conductivity by electric field. Further evidences show that the reconstruction of internal electric field and the generation of induced charges lead to the increased scattering rate from strong phonon anharmonicity. Thus, the ultra-low thermal conductivity emerges with external electric field applied. Applying external electric field to regulate thermal conductivity enlightens the constructive idea for high-efficient thermal management.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

The record low thermal conductivity of monolayer Cuprous Iodide (CuI) with direct wide bandgap

Two-dimensional materials have attracted lots of research interests due to the fantastic properties that are unique to the bulk counterparts. In this paper, from the state-of-the-art first-principles, we predicted the stable structure of monolayer counterpart of the γ-CuI (Cuprous Iodide), which is a p-type wide bandgap semiconductor. The monolayer CuI presents multifunctional superiority in terms of electronic, optical, and thermal transport properties. Specifically, the ultralow thermal conductivity of 0.116 Wm-1K-1 is predicted for monolayer CuI, which is much lower than γ-CuI (0.997 Wm-1K-1) and other typical semiconductors. Moreover, an ultrawide direct bandgap of 3.57 eV is found in monolayer CuI, which is larger than γ-CuI (2.95-3.1 eV), promoting the applications in nano-/optoelectronics with better optical performance. The ultralow thermal conductivity and direct wide bandgap of monolayer CuI as reported in this study would promise its potential applications in transparent and wearable electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Novel Two-Dimensional Layered MSi$_2$N$_4$ (M = Mo, W): New Promising Thermal Management Materials

With the miniaturization and integration of nanoelectronic devices, efficient heat removal becomes a key factor affecting the reliable operation of the nanoelectronic device. With the high intrinsic thermal conductivity, good mechanical flexibility, and precisely controlled growth, two-dimensional (2D) materials are widely accepted as ideal candidates for thermal management materials. In this work, by solving the phonon Boltzmann transport equation (BTE) based on first-principles calculations, we comprehensively investigated the thermal conductivity of novel 2D layered MSi$_2$N$_4$ (M = Mo, W). Our results point to competitive thermal conductivities (162 W/mK) of monolayer MoSi$_2$N$_4$, which is around two times larger than that of WSi$_2$N$_4$ and seven times larger than that of silicene despite their similar non-planar structures. It is revealed that the high thermal conductivity arises mainly from its large group velocity and low anharmonicity. Our result suggests that MoSi$_2$N$_4$ could be a potential candidate for 2D thermal management materials.

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