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Ailing Chen

Ailing Chen contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Joint user association and power allocation in ultra-dense mmWave networks: a multi-connectivity approach

In ultra-dense millimeter wave (mmWave) networks, mmWave signals suffer from severe path losses and are easily blocked by obstacles. Meanwhile, ultra-dense deployment causes excessive handovers, which reduces the data link reliability. To alleviate the above issues, the novel technology, known as multi-connectivity enabled user association (MCUA) is incorporated in this letter. We aim to jointly optimize MCUAs and downlink (DL) power allocations (PAs) to maximize the DL rate of each user simultaneously, rather than total. This is a non-convex nonlinear 0-1 mixed integer multi-objective optimization problem and quite complicated. To solve it, we first use the weighted sum method to scalarize it as a single-objective optimization problem (SOOP), and then relax the binary association variables to real ones. Considering that the relaxed SOOP is still non-convex, we perform a series of transformations upon it and make it a differential of convex programming. Finally, we develop an iterative algorithm based on the convex-concave procedure to solve the SOOP. Numerical results are presented to demonstrate the effectiveness of the proposed algorithms.

preprint2022arXiv

The record low thermal conductivity of monolayer Cuprous Iodide (CuI) with direct wide bandgap

Two-dimensional materials have attracted lots of research interests due to the fantastic properties that are unique to the bulk counterparts. In this paper, from the state-of-the-art first-principles, we predicted the stable structure of monolayer counterpart of the γ-CuI (Cuprous Iodide), which is a p-type wide bandgap semiconductor. The monolayer CuI presents multifunctional superiority in terms of electronic, optical, and thermal transport properties. Specifically, the ultralow thermal conductivity of 0.116 Wm-1K-1 is predicted for monolayer CuI, which is much lower than γ-CuI (0.997 Wm-1K-1) and other typical semiconductors. Moreover, an ultrawide direct bandgap of 3.57 eV is found in monolayer CuI, which is larger than γ-CuI (2.95-3.1 eV), promoting the applications in nano-/optoelectronics with better optical performance. The ultralow thermal conductivity and direct wide bandgap of monolayer CuI as reported in this study would promise its potential applications in transparent and wearable electronics.