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Dong-Wook Kim

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2 published item(s)

preprint2022arXiv

RZSR: Reference-based Zero-Shot Super-Resolution with Depth Guided Self-Exemplars

Recent methods for single image super-resolution (SISR) have demonstrated outstanding performance in generating high-resolution (HR) images from low-resolution (LR) images. However, most of these methods show their superiority using synthetically generated LR images, and their generalizability to real-world images is often not satisfactory. In this paper, we pay attention to two well-known strategies developed for robust super-resolution (SR), i.e., reference-based SR (RefSR) and zero-shot SR (ZSSR), and propose an integrated solution, called reference-based zero-shot SR (RZSR). Following the principle of ZSSR, we train an image-specific SR network at test time using training samples extracted only from the input image itself. To advance ZSSR, we obtain reference image patches with rich textures and high-frequency details which are also extracted only from the input image using cross-scale matching. To this end, we construct an internal reference dataset and retrieve reference image patches from the dataset using depth information. Using LR patches and their corresponding HR reference patches, we train a RefSR network that is embodied with a non-local attention module. Experimental results demonstrate the superiority of the proposed RZSR compared to the previous ZSSR methods and robustness to unseen images compared to other fully supervised SISR methods.

preprint2014arXiv

Influence of gas ambient on charge writing at the LaAlO3/SrTiO3 heterointerface

We investigated the influences charge writing on the surface work function and resistance of the LaAlO3/SrTiO3 (LAO/STO) heterointerface in several gas environments (air, O2, N2, and H2/N2). Charge writing decreased the surface work function and resistance of the LAO/STO sample quite a lot in air but slightly in O2.The interface carrier density was extracted from the measured sheet resistance and compared with that obtained from the proposed charge-writing mechanisms, such as carrier transfer via surface adsorbates and surface redox. Such quantitative analyses suggested that additional processes (e.g., electronic state modification and electrochemical surface reaction) were required to explain charge writing on the LAO/STO interface.