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Researcher profile

Dong-Hun Chae

Dong-Hun Chae contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.ins-det

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Published work

3 published item(s)

preprint2020arXiv

Quantum mechanical current-to-voltage conversion with quantum Hall resistance array

Accurate measurement of the electric current requires a stable and calculable resistor for an ideal current to voltage conversion. However, the temporal resistance drift of a physical resistor is unavoidable, unlike the quantum Hall resistance directly linked to the Planck constant h and the elementary charge e. Lack of an invariant high resistance leads to a challenge in making small current measurements below 1 muA with an uncertainty better than one part in 106. In this work, we demonstrate a current to voltage conversion in the range from a few nano amps to one microamp with an invariant quantized Hall array resistance. The converted voltage is directly compared with the Josephson voltage reference in the framework of Ohm's law. Markedly distinct from the classical conversion, which relies on an artifact resistance reference, this current-to-voltage conversion does not demand timely resistance calibrations. It improves the precision of current measurement down to 8 10 -8 at 1 muA.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Realization of 5 h/e^2 with graphene quantum Hall resistance array

We report on realization of 10 quantum Hall devices in series fabricated using epitaxial graphene on silicon carbide. Precision measurements with a resistance bridge indicates that the quantized Hall resistance across an array at filling factor 2 is equivalent to 5 h/e^2 within the measurement uncertainty of approximately 4 10-8. A quantum-Hall phase diagram for the array shows that a metrological quantization of 5 h/e^2 can be achieved at the magnetic field of 6 T and temperature of 4 K. This experiment demonstrates the possibility of timely unchangeable resistance reference in various ranges in relaxed experimental conditions.

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preprint2010arXiv

Hot Phonons in an Electrically Biased Graphene Constriction

Phonon carrier interactions can have significant impact on device performance. They can be probed by measuring the phonon lifetime, which reflects the interaction strength of a phonon with other quasi-particles in particular charge carriers as well as its companion phonons. The carrier phonon and phonon-phonon contributions to the phonon lifetime can be disentangled from temperature dependent studies. Here, we address the importance of phonon carrier interactions in Joule-heated graphene constrictions in order to contribute to the understanding of energy dissipation in graphene based electronic devices. We demonstrate that gapless graphene grants electron phonon interactions uncommon significance in particular at low carrier density. In conventional semiconductors, the bandgap usually prevents the decay of phonons through electron-hole generation and also in metals or other semimetals the Fermi temperature is excessively large to enter the regime where electron phonon coupling plays such a dominant role as in graphene in the investigated phonon temperature regime from 300 to 1600 K.

0 citations0 reviewsNo code linkedOpen access