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Dong-Hun Chae

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cond-mat.mes-hall cond-mat.mtrl-sci physics.ins-det

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preprint2020arXiv

Quantum mechanical current-to-voltage conversion with quantum Hall resistance array

Accurate measurement of the electric current requires a stable and calculable resistor for an ideal current to voltage conversion. However, the temporal resistance drift of a physical resistor is unavoidable, unlike the quantum Hall resistance directly linked to the Planck constant h and the elementary charge e. Lack of an invariant high resistance leads to a challenge in making small current measurements below 1 muA with an uncertainty better than one part in 106. In this work, we demonstrate a current to voltage conversion in the range from a few nano amps to one microamp with an invariant quantized Hall array resistance. The converted voltage is directly compared with the Josephson voltage reference in the framework of Ohm's law. Markedly distinct from the classical conversion, which relies on an artifact resistance reference, this current-to-voltage conversion does not demand timely resistance calibrations. It improves the precision of current measurement down to 8 10 -8 at 1 muA.

preprint2020arXiv

Realization of 5 h/e^2 with graphene quantum Hall resistance array

We report on realization of 10 quantum Hall devices in series fabricated using epitaxial graphene on silicon carbide. Precision measurements with a resistance bridge indicates that the quantized Hall resistance across an array at filling factor 2 is equivalent to 5 h/e^2 within the measurement uncertainty of approximately 4 10-8. A quantum-Hall phase diagram for the array shows that a metrological quantization of 5 h/e^2 can be achieved at the magnetic field of 6 T and temperature of 4 K. This experiment demonstrates the possibility of timely unchangeable resistance reference in various ranges in relaxed experimental conditions.

preprint2014arXiv

Electrical Modulation of Superconducting Critical Temperature in Liquid-Gated Thin Niobium Films

We demonstrate that the superconducting critical temperature (Tc) of thin niobium films can be electrically modulated in a liquid-gated geometry device. Tc can be suppressed and enhanced by applying positive and negative gate voltage, respectively, in a reversible manner within a range of about 0.1 K. At a fixed temperature below Tc, we observed that the superconducting critical current can be modulated by gate voltage. This result suggests a possibility of an electrically-controlled switching device operating at or above liquid helium temperature, where superconductivity can be turned on or off solely by the applied gate voltage.

preprint2011arXiv

Excitonic Fano Resonance in Freestanding Graphene

We investigate the role of electron-hole correlations in the absorption of freestanding monolayer and bilayer graphene using optical transmission spectroscopy from 1.5 to 5.5 eV. Line shape analysis demonstrates that the ultraviolet region is dominated by an asymmetric Fano resonance. We attribute this to an excitonic resonance that forms near the van-Hove singularity at the saddle point of the band structure and couples to the Dirac continuum. The Fano model quantitatively describes the experimental data all the way down to the infrared. In contrast, the common non-interacting particle picture cannot describe our data. These results suggest a profound connection between the absorption properties and the topology of the graphene band structure.

preprint2010arXiv

Hot Phonons in an Electrically Biased Graphene Constriction

Phonon carrier interactions can have significant impact on device performance. They can be probed by measuring the phonon lifetime, which reflects the interaction strength of a phonon with other quasi-particles in particular charge carriers as well as its companion phonons. The carrier phonon and phonon-phonon contributions to the phonon lifetime can be disentangled from temperature dependent studies. Here, we address the importance of phonon carrier interactions in Joule-heated graphene constrictions in order to contribute to the understanding of energy dissipation in graphene based electronic devices. We demonstrate that gapless graphene grants electron phonon interactions uncommon significance in particular at low carrier density. In conventional semiconductors, the bandgap usually prevents the decay of phonons through electron-hole generation and also in metals or other semimetals the Fermi temperature is excessively large to enter the regime where electron phonon coupling plays such a dominant role as in graphene in the investigated phonon temperature regime from 300 to 1600 K.