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Dominique Bougeard

Dominique Bougeard appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciquant-phcond-mat.otherphysics.app-ph

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Published work

14 published item(s)

preprint2022arXiv

Circular polarization immunity of the cyclotron resonance photoconductivity in two-dimensional electron systems

Studying the cyclotron resonance (CR)-induced photoconductivity in GaAs and HgTe two-dimensional electron structures, we observed an anomalous photoresponse for the CR-inactive geometry being of almost the same magnitude as the CR-active one. This observation conflicts with simultaneous transmission measurements and contradicts the conventional theory of CR which predicts no resonant response for the CR-inactive geometry. We provide a possible route to explain this fundamental failure of the conventional description of light-matter interaction and discuss a modified electron dynamics near strong impurities that may provide a local near-field coupling of the two helicity modes of the terahertz field at low temperatures. This should result in a CR-enhanced local absorption and, thus, CR photoconductivity for both magnetic field polarities.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Closed-loop control of a GaAs-based singlet-triplet spin qubit with 99.5% gate fidelity and low leakage

Semiconductor spin qubits have recently seen major advances in coherence time and control fidelities, leading to a single-qubit performance that is on par with other leading qubit platforms. Most of this progress is based on microwave control of single spins in devices made of isotopically purified silicon. For controlling spins, the exchange interaction is an additional key ingredient which poses new challenges for high-fidelity control. Here, we demonstrate exchange-based single-qubit gates of two-electron spin qubits in GaAs double quantum dots. Using careful pulse optimization and closed-loop tuning, we achieve a randomized benchmarking fidelity of $(99.50 \pm 0.04)\%$ and a leakage rate of $0.13\%$ out of the computational subspace. These results open new perspectives for microwave-free control of singlet-triplet qubits in GaAs and other materials.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Gating of two-dimensional electron systems in InGaAs/InAlAs heterostructures: the role of the intrinsic InAlAs deep donor defects

We present an analysis of gated InGaAs/InAlAs heterostructures, a device platform to realize spinorbitronic functionalities in semiconductors. The phenomenological model deduced from our magnetotransport experiments allows us to correlate the gate response of the studied two-dimensional electron systems to heterostructure design parameters, in particular the indium concentration. We explain the occurrence of metastable electrostatic configurations showing reduced capacitive coupling and provide gate operation strategies to reach classical field effect control in such heterostructures. Our study highlights the role of the intrinsic InAlAs deep donor defects, as they govern the dynamics of the electrostatic response to gate voltage variations through charge trapping and unintentional tunneling.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/Si$_x$Ge$_{1-x}$ quantum dot

Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 $μ$eV in a gate-defined single quantum dot, hosted in molecular-beam epitaxy-grown $^{28}$Si/SiGe. The valley splitting is monotonically and reproducibly tunable up to 15 % by gate voltages, originating from a 6 nm lateral displacement of the quantum dot. We observe static spin relaxation times $T_1>1$ s at low magnetic fields in our device containing an integrated nanomagnet. At higher magnetic fields, $T_1$ is limited by the valley hotspot and by phonon noise coupling to intrinsic and artificial spin-orbit coupling, including phonon bottlenecking.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Low-frequency spin qubit detuning noise in highly purified $^{28}$Si/SiGe

The manipulation fidelity of a single electron qubit gate-confined in a $^{28}$Si/SiGe quantum dot has recently been drastically improved by nuclear isotope purification. Here, we identify the dominant source for low-frequency qubit detuning noise in a device with an embedded nanomagnet, a remaining $^{29}$Si concentration of only 60$\,$ppm in the strained $^{28}$Si quantum well layer and a spin echo decay time $T_2^{\text{echo}}=128\,μ$s. The power spectral density (PSD) of the charge noise explains both the observed transition of a $1/f^2$- to a $1/f$-dependence of the detuning noise PSD as well as the observation of a decreasing time-ensemble spin dephasing time from $T_2^* \approx 20\,μ$s with increasing measurement time over several hours. Despite their strong hyperfine contact interaction, the few $^{73}$Ge nuclei overlapping with the quantum dot in the barrier do not limit $T_2^*$, as their dynamics is frozen on a few hours measurement scale. We conclude that charge noise and the design of the gradient magnetic field is the key to further improve the qubit fidelity.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Enhanced spin-orbit coupling in core/shell nanowires

The spin-orbit coupling (SOC) in semiconductors is strongly influenced by structural asymmetries, as prominently observed in bulk crystal structures that lack inversion symmetry. Here, we study an additional effect on the SOC: the asymmetry induced by the large interface area between a nanowire core and its surrounding shell. Our experiments on purely wurtzite GaAs/AlGaAs core/shell nanowires demonstrate optical spin injection into a single free-standing nanowire and determine the effective electron g-factor of the hexagonal GaAs wurtzite phase. The spin relaxation is highly anisotropic in time-resolved micro-photoluminescence measurements on single nanowires, showing a significant increase of spin relaxation in external magnetic fields. This behavior is counterintuitive compared to bulk wurtzite crystals. We present a model for the observed electron spin dynamics highlighting the dominant role of the interface-induced SOC in these core/shell nanowires. This enhanced SOC may represent an interesting tuning parameter for the implementation of spin-orbitronic concepts in semiconductor-based structures.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Feedback-tuned noise-resilient gates for encoded spin qubits

Two level quantum mechanical systems like spin 1/2 particles lend themselves as a natural qubit implementation. However, encoding a single qubit in several spins reduces the resources necessary for qubit control and can protect from decoherence channels. While several varieties of such encoded spin qubits have been implemented, accurate control remains challenging, and leakage out of the subspace of valid qubit states is a potential issue. Here, we realize high-fidelity single qubit operations for a qubit encoded in two electron spins in GaAs quantum dots by iterative tuning of the all-electrical control pulses. Using randomized benchmarking, we find an average gate fidelity of $\mathcal{F} = (98.5 \pm 0.1)\,\%$ and determine the leakage rate between the computational subspace and other states to $\mathcal{L} = (0.4\pm0.1)\,\%$. These results also demonstrate that high fidelity gates can be realized even in the presence of nuclear spins as in III-V semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Quadrupolar and anisotropy effects on dephasing in two-electron spin qubits in GaAs

Understanding the decoherence of electron spins in semiconductors due to their interaction with nuclear spins is of fundamental interest as they realize the central spin model and of practical importance for using electron spins as qubits. Interesting effects arise from the quadrupolar interaction of nuclear spins with electric field gradients, which have been shown to suppress diffusive nuclear spin dynamics. One might thus expect them to enhance electron spin coherence. Here we show experimentally that for gate-defined GaAs quantum dots, quadrupolar broadening of the nuclear Larmor precession can also reduce electron spin coherence due to faster decorrelation of transverse nuclear fields. However, this effect can be eliminated for appropriate field directions. Furthermore, we observe an additional modulation of spin coherence that can be attributed to an anisotropic electronic $g$-tensor. These results complete our understanding of dephasing in gated quantum dots and point to mitigation strategies. They may also help to unravel unexplained behaviour in related systems such as self-assembled quantum dots and III-V nanowires.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Shot Noise Induced by Nonequilibrium Spin Accumulation

When an electric current passes across a potential barrier, the partition process of electrons at the barrier gives rise to the shot noise, reflecting the discrete nature of the electric charge. Here we report the observation of excess shot noise connected with a spin current which is induced by a nonequilibrium spin accumulation in an all-semiconductor lateral spin-valve device. We find that this excess shot noise is proportional to the spin current. Additionally, we determine quantitatively the spin-injection-induced electron temperature by measuring the current noise. Our experiments show that spin accumulation driven shot noise provides a novel means of investigating nonequilibrium spin transport.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Cubic Rashba spin-orbit interaction of two-dimensional hole gas in strained-Ge/SiGe quantum well

The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrated electric field control of the Rashba SOI. Our findings reveal that the heavy hole (HH) in strained-Ge is a purely cubic-Rashba-system, which is consistent with the spin angular momentum mj = +-3/2 nature of the HH wave function.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Giant enhancement of spin detection sensitivity in (Ga,Mn)As/GaAs Esaki diodes

We investigate the correlation between spin signals measured in three-terminal (3T) geometry by the Hanle effect and the spin accumulation generated in a semiconductor channel in a lateral (Ga,Mn)As/GaAs Esaki diode device. We systematically compare measurements using a 3T configuration, probing spin accumulation directly beneath the injecting contact, with results from nonlocal measurements, where solely spin accumulation in the GaAs channel is probed. We find that the spin signal detected in the 3T configuration is dominated by a bias-dependent spin detection sensitivity, which in turn is strongly correlated with charge-transport properties of the junction. This results in a particularly strong enhancement of the detected spin signal in a region of increased differential resistance. We find additionally that two-step tunneling via localized states (LS) in the gap of (Ga,Mn)As does not compromise spin injection into the semiconductor conduction band.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

All-electrical measurements of direct spin Hall effect in GaAs with Esaki diode electrodes

We report on measurements of direct spin Hall effect in a lightly n-doped GaAs channel. As spin detecting contacts we employed highly efficient ferromagnetic Fe/(Ga,Mn)As/GaAs Esaki diode structures. We investigate bias and temperature dependence of the measured spin Hall signal and evaluate the value of total spin Hall conductivity and its dependence on channel conductivity and temperature. From the results we determine skew scattering and side jump contribution to the total spin hall conductivity and compare it with the results of experiments on higher conductive n-GaAs channels[Phys. Rev. Lett. 105,156602(2010)]. As a result we conclude that both skewness and side jump contribution cannot be fully independent on the conductivity of the channel.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Few electron double quantum dot in an isotopically purified $^{28}$Si quantum well

We present a few electron double quantum dot (QD) device defined in an isotopically purified $^{28}$Si quantum well (QW). An electron mobility of $5.5 \cdot 10^4 cm^2(Vs)^{-1}$ is observed in the QW which is the highest mobility ever reported for a 2D electron system in $^{28}$Si. The residual concentration of $^{29}$Si nuclei in the $^{28}$Si QW is lower than $10^{3} ppm$, at the verge where the hyperfine interaction is theoretically no longer expected to dominantly limit the $T_{2}$ spin dephasing time. We also demonstrate a complete suppression of hysteretic gate behavior and charge noise using a negatively biased global top gate.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Nonuniform current density and spin accumulation in a 1 μm thick n-GaAs channel

The spin accumulation in an n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 \mum thick n-GaAs channel with the maximum polarization near the contact edge opposite to the maximum current density. The one-dimensional model of electron drift and spin diffusion frequently used cannot explain this observation. It also leads to incorrect spin lifetimes from Hanle curves with a strong bias and distance dependence. Numerical simulations based on a two-dimensional drift-diffusion model, however, reproduce the observed spin distribution quite well and lead to realistic spin lifetimes.

0 citations0 reviewsNo code linkedOpen access