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Researcher profile

Dominik Bischoff

Dominik Bischoff contributes to research discovery and scholarly infrastructure.

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Published work

10 published item(s)

preprint2016arXiv

Measurement back-action in stacked graphene quantum dots

We present an electronic transport experiment in graphene where both classical and quantum mechanical charge detector back-action on a quantum dot are investigated. The device consists of two stacked graphene quantum dots separated by a thin layer of boron nitride. This device is fabricated by van der Waals stacking and is equipped with separate source and drain contacts to both dots. By applying a finite bias to one quantum dot, a current is induced in the other unbiased dot. We present an explanation of the observed measurement-induced current based on strong capacitive coupling and energy dependent tunneling barriers, breaking the spatial symmetry in the unbiased system. This is a special feature of graphene-based quantum devices. The experimental observation of transport in classically forbidden regimes is understood by considering higher order quantum mechanical back-action mechanisms.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Band gap and broken chirality in single-layer and bilayer graphene

Chirality is one of the key features governing the electronic properties of single- and bilayer graphene: the basics of this concept and its consequences on transport are presented in this review. By breaking the inversion symmetry, a band gap can be opened in the band structures of both systems at the K-point. This leads to interesting consequences for the pseudospin and, therefore, for the chirality. These consequences can be accessed by investigating the evolution of the Berry phase in such systems. Experimental observations of Fabry-Perot interference in a dual-gated bilayer graphene device are finally presented and are used to illustrate the role played by the band gap on the evolution of the pseudospin. The presented results can be attributed to the breaking of the chirality in the energy range close to the gap.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Graphene nanoribbons: relevance of etching process

Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely oxygen plasma ashing and oxygen/argon reactive ion etching (RIE). Oxygen plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tunable Fermi surface topology and Lifshitz transition in bilayer graphene

Bilayer graphene is a highly tunable material: not only can one tune the Fermi energy using standard gates, as in single-layer graphene, but the band structure can also be modified by external perturbations such as transverse electric fields or strain. We review the theoretical basics of the band structure of bilayer graphene and study the evolution of the band structure under the influence of these two external parameters. We highlight their key role concerning the ease to experimentally probe the presence of a Lifshitz transition, which consists in a change of Fermi contour topology as a function of energy close to the edges of the conduction and valence bands. Using a device geometry that allows the application of exceptionally high displacement fields, we then illustrate in detail the way to probe the topology changes experimentally using quantum Hall effect measurements in a gapped bilayer graphene system.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Anomalous sequence of quantum Hall liquids revealing tunable Lifshitz transition in bilayer graphene

Fermi surface topology plays an important role in determining the electronic properties of metals. In bulk metals, the Fermi energy is not easily tunable at the energy scale needed for reaching conditions for the Lifshitz transition - a singular point in the band structure where the connectivity of the Fermi surface changes. Bilayer graphene is a unique system where both Fermi energy and the low-energy electron dispersion can be tuned using the interplay between trigonal warping and a band gap opened by a transverse electric field. Here, we drive the Lifshitz transition to experimentally controllable carrier densities by applying large transverse electric fields through a h-BN-encapsulated bilayer graphene structure, and detect it by measuring the degeneracies of Landau levels. These degeneracies are revealed by filling factor -3 and -6 quantum Hall effect states of holes at low magnetic fields reflecting the existence of three maxima on the top of the valence band dispersion. At high magnetic fields all integer quantum Hall states are observed, indicating that deeper in the valence band the constant energy contours are singly-connected. The fact that we observe ferromagnetic quantum Hall states at odd-integer filling factors testifies to the high quality of our sample, and this enables us to identify several phase transitions between correlated quantum Hall states at intermediate magnetic fields, in agreement with the calculated evolution of the Landau level spectrum.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Characterizing wave functions in graphene nanodevices: electronic transport through ultrashort graphene constrictions on a boron nitride substrate

We present electronic transport measurements through short and narrow (30x30 nm) single layer graphene constrictions on a hexagonal boron nitride substrate. While the general observation of Coulomb-blockade is compatible with earlier work, the details are not: we show that the area on which charge is localized can be significantly larger than the area of the constriction, suggesting that the localized states responsible for Coulomb-blockade leak out into the graphene bulk. The high bulk mobility of graphene on hexagonal boron nitride, however, seems not consistent with the short bulk localization length required to see Coulomb-blockade. To explain these findings, charge must instead be primarily localized along the imperfect edges of the devices and extend along the edge outside of the constriction. In order to better understand the mechanisms, we compare the experimental findings with tight-binding simulations of such constrictions with disordered edges. Finally we discuss previous experiments in the light of these new findings.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electronic triple-dot transport through a bilayer graphene island with ultrasmall constrictions

A quantum dot has been etched in bilayer graphene connected by two small constrictions to the leads. We show that this structure does not behave like a single quantum dot but consists of at least three sites of localized charge in series. The high symmetry and electrical stability of the device allowed us to triangulate the positions of the different sites of localized charge and find that one site is located in the island and one in each of the constrictions. Nevertheless we measure many consecutive single non-overlapping Coulomb-diamonds in series. In order to describe these findings, we treat the system as a strongly coupled serial triple quantum dot. We find that the non-overlapping Coulomb diamonds arise due to higher order cotunneling through the outer dots located in the constrictions. We extract all relevant capacitances, simulate the measured data with a capacitance model and discuss its implications on electrical transport.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Fabry-Pérot interference in gapped bilayer graphene with broken anti-Klein tunneling

We report the experimental observation of Fabry-Pérot (FP) interference in the conductance of a gate-defined cavity in a dual-gated bilayer graphene (BLG) device. The high quality of the BLG flake, combined with the device's electrical robustness provided by the encapsulation between two hexagonal boron nitride layers, allows us to observe ballistic phase-coherent transport through a $1$μm-long cavity. We confirm the origin of the observed interference pattern by comparing to tight-binding calculations accounting for the gate-tunable bandgap. The good agreement between experiment and theory, free of tuning parameters, further verifies that a gap opens in our device. The gap is shown to destroy the perfect reflection for electrons traversing the barrier with normal incidence (anti-Klein tunneling). The broken anti-Klein tunneling implies that the Berry phase, which is found to vary with the gate voltages, is always involved in the FP oscillations regardless of the magnetic field, in sharp contrast with single-layer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Reactive-Ion-Etched Graphene Nanoribbons on a Hexagonal Boron Nitride Substrate

We report on the fabrication and electrical characterization of both single layer graphene micron-sized devices and nanoribbons on a hexagonal boron nitride substrate. We show that the micron-sized devices have significantly higher mobility and lower disorder density compared to devices fabricated on silicon dioxide substrate in agreement with previous findings. The transport characteristics of the reactive-ion-etched graphene nanoribbons on hexagonal boron nitride, however, appear to be very similar to those of ribbons on a silicon dioxide substrate. We perform a detailed study in order to highlight both similarities as well as differences. Our findings suggest that the edges have an important influence on transport in reactive ion-etched graphene nanodevices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Raman spectroscopy on etched graphene nanoribbons

We investigate etched single-layer graphene nanoribbons with different widths ranging from 30 to 130 nm by confocal Raman spectroscopy. We show that the D-line intensity only depends on the edge-region of the nanoribbon and that consequently the fabrication process does not introduce bulk defects. In contrast, the G- and the 2D-lines scale linearly with the irradiated area and therefore with the width of the ribbons. We further give indications that the D- to G-line ratio can be used to gain information about the crystallographic orientation of the underlying graphene. Finally, we perform polarization angle dependent measurements to analyze the nanoribbon edge-regions.

0 citations0 reviewsNo code linkedOpen access