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Researcher profile

Dmitry Miserev

Dmitry Miserev contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.str-elcond-mat.quant-gasquant-ph

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Published work

4 published item(s)

preprint2022arXiv

Instability of the ferromagnetic quantum critical point in strongly interacting 2D and 3D electron gases with arbitrary spin-orbit splitting

In this work we revisit itinerant ferromagnetism in 2D and 3D electron gases with arbitrary spin-orbit splitting and strong electron-electron interaction. We identify the resonant scattering processes close to the Fermi surface that are responsible for the instability of the ferromagnetic quantum critical point at low temperatures. In contrast to previous theoretical studies, we show that such processes cannot be fully suppressed even in presence of arbitrary spin-orbit splitting. A fully self-consistent non-perturbative treatment of the electron-electron interaction close to the phase transition shows that these resonant processes always destabilize the ferromagnetic quantum critical point and lead to a first-order phase transition. Characteristic signatures of these processes can be measured via the non-analytic dependence of the spin susceptibility on magnetic field both far away or close to the phase transition.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Fermi Surface Resonance and Quantum Criticality in Strongly Interacting Fermi Gases

Fermions in the Fermi gas obey the Pauli exclusion principle restricting any two fermions from filling the same quantum state. Strong interaction between fermions can completely change the properties of the Fermi gas. In our theoretical study we find a new exotic quantum phase in strongly interacting Fermi gases constrained to a certain condition imposed on the Fermi surfaces which we call the Fermi surface resonance. The new phase is quantum critical which can be identified by the power-law frequency tail of the spectral density and divergent static susceptibilities. An especially striking feature of the new phase is the anomalous power-law temperature dependence of the dc resistivity that is similar to strange metals. The new quantum critical phase can be experimentally found in ordinary semiconductor heterostructures.

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preprint2020arXiv

Magnetic phase transitions in two-dimensional two-valley semiconductors with in-plane magnetic field

A two-dimensional electron gas (2DEG) in two-valley semiconductors has two discrete degrees of freedom given by the spin and valley quantum numbers. We analyze the zero-temperature magnetic instabilities of two-valley semiconductors with SOI, in-plane magnetic field, and electron-electron interaction. The interplay of an applied in-plane magnetic field and the SOI results in non-collinear spin quantization in different valleys. Together with the exchange intervalley interaction this results in a rich phase diagram containing four non-trivial magnetic phases. The negative non-analytic cubic correction to the free energy, which is always present in an interacting 2DEG, is responsible for first order phase transitions. Here, we show that non-zero ground state values of the order parameters can cut this cubic non-analyticity and drive certain magnetic phase transitions second order. We also find two tri-critical points at zero temperature which together with the line of second order phase transitions constitute the quantum critical sector of the phase diagram. The phase transitions can be tuned externally by electrostatic gates or by the in-plane magnetic field.

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preprint2019arXiv

First-order magnetic phase-transition of mobile electrons in monolayer MoS$_2$

Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS$_2$. The phase boundary separates a spin-polarised (ferromagnetic) phase at low electron density and a paramagnetic phase at high electron density. Abrupt changes in the optical response signal an abrupt change in the magnetism. The magnetic order is thereby controlled via the voltage applied to the gate electrode of the device. Accompanying the change in magnetism is a large change in the electron effective mass.

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