Topologically trivial semiconducting behavior and polaronic effects in antiferromagnetic EuZnAs and EuCdSb
The Eu-based EuAX (A = Zn, Cd, In, Sn; X = P, As, Sb) family of compounds has recently attracted significant attention as a promising platform for exploring magnetic topological materials, with several members either predicted or reported to exhibit nontrivial topological properties. We investigate the previously reported topological semimetals, EuZnAs and EuCdSb, using scanning tunneling microscopy and spectroscopy, complemented by various first-principles computational approaches. Through examination of the cleaved surfaces, step-edges, and defect states, we determine the trivial semiconducting behavior in both material systems, with no evidence of topological surface or edge states. These experimental results are consistent with our theoretical analysis revealing the absence of topological band inversion in either system. Our experimental observations also reveal numerous intrinsic defects that trap charge carriers. These defects may facilitate the formation of magnetic polarons, providing a natural explanation for the colossal negative magnetoresistance observed in many of the EuAX material systems.