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Dionisio Doering

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2 published item(s)

preprint2022arXiv

Smart sensors using artificial intelligence for on-detector electronics and ASICs

Cutting edge detectors push sensing technology by further improving spatial and temporal resolution, increasing detector area and volume, and generally reducing backgrounds and noise. This has led to a explosion of more and more data being generated in next-generation experiments. Therefore, the need for near-sensor, at the data source, processing with more powerful algorithms is becoming increasingly important to more efficiently capture the right experimental data, reduce downstream system complexity, and enable faster and lower-power feedback loops. In this paper, we discuss the motivations and potential applications for on-detector AI. Furthermore, the unique requirements of particle physics can uniquely drive the development of novel AI hardware and design tools. We describe existing modern work for particle physics in this area. Finally, we outline a number of areas of opportunity where we can advance machine learning techniques, codesign workflows, and future microelectronics technologies which will accelerate design, performance, and implementations for next generation experiments.

preprint2010arXiv

Characterisation of a CMOS Active Pixel Sensor for use in the TEAM Microscope

A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are compared to predictions of simulation. The line spread function measured with 80 keV and 300 keV electrons is (12.1+/-0.7) micron and (7.4+/-0.6) micron, respectively, in good agreement with our simulation. We measure the detection quantum efficiency to be 0.78+/-0.04 at 80 keV and 0.74+/-0.03 at 300 keV. Using a new imaging technique, based on single electron reconstruction, the line spread function for 80 keV and 300 keV electrons becomes (6.7+/-0.3) micron and (2.4+/-0.2) micron, respectively. The radiation tolerance of the pixels has been tested up to 5 Mrad and the detector is still functional with a decrease of dynamic range by ~30%, corresponding to a reduction in full-well depth from ~39 to ~27 primary 300 keV electrons, due to leakage current increase, but identical line spread function performance.