Mott versus hybridization gap in the low-temperature phase of -TaS
We compute the correlated electronic structure of stacked -TaS bilayers using the + EDMFT method. Depending on the surface termination, the semi-infinite uncorrelated system is either band-insulating or exhibits a metallic surface state. For realistic values of the onsite and intersite interactions, a Mott gap opens in the surface state, but this gap is smaller than the gap originating from the bilayer structure. Our results are consistent with recent scanning tunneling spectroscopy measurements for different terminating layers, and with our own photoemission measurements, which indicate the coexistence of spatial regions with different gaps in the electronic spectrum.