Researcher profile

Dennis Huang

Dennis Huang contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2016arXiv

Bounds on Nanoscale Nematicity in Single-Layer FeSe/SrTiO$_3$

We use scanning tunneling microscopy (STM) and quasiparticle interference (QPI) imaging to investigate the low-energy orbital texture of single-layer FeSe/SrTiO$_3$. We develop a $T$-matrix model of multi-orbital QPI to disentangle scattering intensities from Fe $3d_{xz}$ and $3d_{yz}$ bands, enabling the use of STM as a nanoscale detection tool of nematicity. By sampling multiple spatial regions of a single-layer FeSe/SrTiO$_3$ film, we quantitatively exclude static $xz/yz$ orbital ordering with domain size larger than $δr^2$ = 20 nm $\times$ 20 nm, $xz/yz$ Fermi wave vector difference larger than $δk$ = 0.014 $π$, and energy splitting larger than $δE$ = 3.5 meV. The lack of detectable ordering pinned around defects places qualitative constraints on models of fluctuating nematicity.

preprint2016arXiv

Dumbbell Defects in FeSe Films: A Scanning Tunneling Microscopy and First-Principles Investigation

The properties of iron-based superconductors (Fe-SCs) can be varied dramatically with the introduction of dopants and atomic defects. As a pressing example, FeSe, parent phase of the highest-$T_c$ Fe-SC, exhibits prevalent defects with atomic-scale "dumbbell" signatures as imaged by scanning tunneling microscopy (STM). These defects spoil superconductivity when their concentration exceeds 2.5%. Resolving their chemical identity is prerequisite to applications such as nanoscale patterning of superconducting/nonsuperconducting regions in FeSe, as well as fundamental questions such as the mechanism of superconductivity and the path by which the defects destroy it. We use STM and density functional theory to characterize and identify the dumbbell defects. In contrast to previous speculations about Se adsorbates or substitutions, we find that an Fe-site vacancy is the most energetically favorable defect in Se-rich conditions, and reproduces our observed STM signature. Our calculations shed light more generally on the nature of Se capping, the removal of Fe vacancies via annealing, and their ordering into a $\sqrt{5}$$\times$$\sqrt{5}$ superstructure in FeSe and related alkali-doped compounds.

preprint2016arXiv

Electric Field Tuning of Band Offsets in Transition Metal Dichalcogenides

We use first-principles calculations to investigate the band structure evolution of W$X_2$/Mo$X_2$ ($X$ = S, Se) heterobilayers under a perpendicular electric field. We characterize the extent to which the type-II band alignment in these compounds can be tuned or inverted electrostatically. Our results demonstrate two effects of stacking configuration. First, different stackings produce different net dipole moments, resulting in band offset variations that are larger than 0.1 eV. Second, based on symmetry constraints that depend on stacking, a perpendicular electric field may hybridize W$X_2$ and Mo$X_2$ bands that cross at the Brillouin Zone corner $K$. Our results suggest that external electric fields can be used to tune the physics of intralayer and interlayer excitons in heterobilayers of transition metal dichalcogenides.

preprint2015arXiv

Revealing the Empty-State Electronic Structure of Single-Unit-Cell FeSe/SrTiO$_{3}$

We use scanning tunneling spectroscopy to investigate the filled and empty electronic states of superconducting single-unit-cell FeSe deposited on SrTiO$_3$(001). We map the momentum-space band structure by combining quasiparticle interference imaging with decay length spectroscopy. In addition to quantifying the filled-state bands, we discover a $Γ$-centered electron pocket 75 meV above the Fermi energy. Our density functional theory calculations show the orbital nature of empty states at $Γ$ and suggest that the Se height is a key tuning parameter of their energies, with broad implications for electronic properties.

preprint2014arXiv

Nanoscale interplay of strain and doping in a high-temperature superconductor

The highest temperature superconductors are electronically inhomogeneous at the nanoscale, suggesting the existence of a local variable which could be harnessed to enhance the superconducting pairing. Here we report the relationship between local doping and local strain in the cuprate superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$. We use scanning tunneling microscopy to discover that the crucial oxygen dopants are periodically distributed, in correlation with local strain. Our picoscale investigation of the intra-unit-cell positions of all oxygen dopants provides essential structural input for a complete microscopic theory.

preprint2013arXiv

Nanoscale Surface Element Identification and Dopant Homogeneity in the High-$T_c$ Superconductor Pr$_x$Ca$_{1-x}$Fe$_2$As$_2$

We use scanning tunneling microscopy to determine the surface structure and dopant distribution in Pr$_x$Ca$_{1-x}$Fe$_2$As$_2$, the highest-$T_c$ member of the 122 family of iron-based superconductors. We identify the cleaved surface termination by mapping the local tunneling barrier height, related to the work function. We image the individual Pr dopants responsible for superconductivity, and show that they do not cluster, but in fact repel each other at short length scales. We therefore suggest that the low volume fraction high-$T_c$ superconducting phase is unlikely to originate from Pr inhomogeneity.