Researcher profile

Denis M. Vasiukov

Denis M. Vasiukov contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Symmetry protected 1D chains in mixed-valence iron oxides

During the last decade of high-pressure research a whole new series of iron oxides was discovered, like Fe$_4$O$_5$, Fe$_5$O$_6$, Fe$_7$O$_9$ etc., featuring closely related structures with arrays of one-dimensional (1D) chains of trigonal prisms embedded between slabs of octahedra. Here, we develop a unified approach to the series based on a specific crystallographic generation mechanism which predicts the structures of these oxides and naturally classifies them in terms of the slab cycle. When including magnetic interactions, we show that the 1D chains have a symmetry protection against magnetic perturbations from the iron ions in the slabs, and that the slab size determines the type of magnetic order, which is either ferromagnetic or antiferromagnetic. Dynamical mean-field theory calculations reveal the orbitally selective Mott state of the Fe ions and tendency of conductivity to low-dimensional behavior with particular enhancement along the 1D chains. Across the series, the decoupling of the chains increases, and so with the inherent charge ordering of the slabs, these structures have the potential to allow experimental realization of the model system of coupled 1D wires. We point out the possibility to stabilize these compounds in the thin-film form that, together with a wide range of possible ionic substitutions and fact that these compounds are recoverable at ambient pressure, makes them a very promising platform to engineer physical systems with interesting magnetotransport phenomena, as corroborated by the recent discovery of quantum Hall effect in ZrTe$_5$.

preprint2020arXiv

Berry phase manipulation in ultrathin SrRuO$_3$ films

A notion of the Berry phase is a powerful means to unravel the non-trivial role of topology in various novel phenomena observed in chiral magnetic materials and structures. A celebrated example is the intrinsic anomalous Hall effect (AHE) driven by the non-vanishing Berry phase in the momentum space. As the AHE is highly dependent on details of the band structure near the Fermi edge, the Berry phase and AHE can be altered in thin films whose chemical potential is tunable by dimensionality and disorder. Here, we demonstrate that in ultrathin SrRuO$_3$ films the Berry phase can be effectively manipulated by the effects of disorder on the intrinsic Berry phase contribution to the AHE, which is corroborated by our numerically exact calculations. In addition, our findings provide ample experimental evidence for the superficial nature of the topological Hall effect attribution to the protected spin texture and instead lend strong support to the multi-channel AHE scenario in ultrathin SrRuO$_3$.