Source author record

Denis D. Sukachev

Denis D. Sukachev appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

quant-ph cond-mat.mes-hall

Catalog footprint

What is connected

3works

2topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2026arXiv

Probing negative differential resistance in silicon with a P-I-N diode-integrated T center ensemble

Solid-state defect quantum systems are exquisite probes of their local charge environment. Nonlinear dynamical electric fields in solids are challenging to characterize directly, conventionally limited to coarse macroscopic methods which fail to capture subtle effects in the material. Here, through transient optical spectroscopy on an embedded T center ensemble, we realize the in-situ observation of a silicon PIN-diode phase transition to a regime of self-sustained carrier oscillatory dynamics characteristic of negative differential resistance. Manifest in both the ensemble electroluminescence and photoluminescence, we find a temperature and field-dependent phase space for persistent undamped amplitude oscillations indicative of a collective ensemble response to the field dynamics. These findings shed new light on the cryogenic behavior of silicon, provide fundamental insight into the physics of the T center for improved quantum device performance, and open a promising new direction for defect-based local quantum sensing in semiconductor devices.

preprint2019arXiv

Experimental demonstration of memory-enhanced quantum communication

The ability to communicate quantum information over long distances is of central importance in quantum science and engineering. For example, it enables secure quantum key distribution (QKD) relying on fundamental principles that prohibit the "cloning" of unknown quantum states. While QKD is being successfully deployed, its range is currently limited by photon losses and cannot be extended using straightforward measure-and-repeat strategies without compromising its unconditional security. Alternatively, quantum repeaters, which utilize intermediate quantum memory nodes and error correction techniques, can extend the range of quantum channels. However, their implementation remains an outstanding challenge, requiring a combination of efficient and high-fidelity quantum memories, gate operations, and measurements. Here we report the experimental realization of memory-enhanced quantum communication. We use a single solid-state spin memory integrated in a nanophotonic diamond resonator to implement asynchronous Bell-state measurements. This enables a four-fold increase in the secret key rate of measurement device independent (MDI)-QKD over the loss-equivalent direct-transmission method while operating megahertz clock rates. Our results represent a significant step towards practical quantum repeaters and large-scale quantum networks.

preprint2016arXiv

Narrow-linewidth homogeneous optical emitters in diamond nanostructures via silicon ion implantation

The negatively-charged silicon-vacancy ($\mathrm{SiV}^{-}$) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum information protocols. Until now, $\mathrm{SiV}^{-}$ centers with narrow optical linewidths and small inhomogeneous distributions of $\mathrm{SiV}^{-}$ transition frequencies have only been reported in samples doped with silicon during diamond growth. We present a technique for producing implanted $\mathrm{SiV}^{-}$ centers with nearly lifetime-limited optical linewidths and a small inhomogeneous distribution. These properties persist after nanofabrication, paving the way for incorporation of high-quality $\mathrm{SiV}^{-}$ centers into nanophotonic devices.