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Source author record

Alp Sipahigil

Alp Sipahigil appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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quant-phcond-mat.mtrl-scicond-mat.mes-hallphysics.optics

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Published work

9 published item(s)

preprint2026arXiv

Probing negative differential resistance in silicon with a P-I-N diode-integrated T center ensemble

Solid-state defect quantum systems are exquisite probes of their local charge environment. Nonlinear dynamical electric fields in solids are challenging to characterize directly, conventionally limited to coarse macroscopic methods which fail to capture subtle effects in the material. Here, through transient optical spectroscopy on an embedded T center ensemble, we realize the in-situ observation of a silicon PIN-diode phase transition to a regime of self-sustained carrier oscillatory dynamics characteristic of negative differential resistance. Manifest in both the ensemble electroluminescence and photoluminescence, we find a temperature and field-dependent phase space for persistent undamped amplitude oscillations indicative of a collective ensemble response to the field dynamics. These findings shed new light on the cryogenic behavior of silicon, provide fundamental insight into the physics of the T center for improved quantum device performance, and open a promising new direction for defect-based local quantum sensing in semiconductor devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

First principles study of the T-center in Silicon

The T-center in silicon is a well-known carbon-based color center that has been recently considered for quantum technology applications. Using first principles computations, we show that the excited state is formed by a defect-bound exciton made of a localized defect state occupied by an electron to which a hole is bound. The localized state is of strong carbon \textit{p} character and reminiscent of the localization of the unpaired electron in the ethyl radical molecule. The radiative lifetime for the defect-bound exciton is calculated to be on the order of $μ$s, much longer than other quantum defects such as the NV center in diamond and in agreement with experiments. The longer lifetime is associated with the small transition dipole moment as a result of the very different nature of the localized and delocalized states forming the defect-bound exciton. Finally, we use first principles calculations to assess the stability of the T-center. We find the T-center to be stable against decomposition into simpler defects when keeping the stoichiometry fixed. However, we identify that the T-center is easily prone to (de)hydrogenation and so requires very precise annealing conditions (temperature and atmosphere) to be efficiently formed.

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preprint2020arXiv

Collapse and Revival of an Artificial Atom Coupled to a Structured Photonic Reservoir

A structured electromagnetic reservoir can result in novel dynamics of quantum emitters. In particular, the reservoir can be tailored to have a memory of past interactions with emitters, in contrast to memory-less Markovian dynamics of typical open systems. In this Article, we investigate the non-Markovian dynamics of a superconducting qubit strongly coupled to a superconducting slow-light waveguide reservoir. Tuning the qubit into the spectral vicinity of the passband of this waveguide, we find non-exponential energy relaxation as well as substantial changes to the qubit emission rate. Further, upon addition of a reflective boundary to one end of the waveguide, we observe revivals in the qubit population on a timescale 30 times longer than the inverse of the qubit's emission rate, corresponding to the round-trip travel time of an emitted photon. By tuning of the qubit-waveguide interaction strength, we probe a crossover between Markovian and non-Markovian qubit emission dynamics. These attributes allow for future studies of multi-qubit circuits coupled to structured reservoirs, in addition to constituting the necessary resources for generation of multiphoton highly entangled states.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum electrodynamics in a topological waveguide

While designing the energy-momentum relation of photons is key to many linear, non-linear, and quantum optical phenomena, a new set of light-matter properties may be realized by employing the topology of the photonic bath itself. In this work we investigate the properties of superconducting qubits coupled to a metamaterial waveguide based on a photonic analog of the Su-Schrieffer-Heeger model. We explore topologically-induced properties of qubits coupled to such a waveguide, ranging from the formation of directional qubit-photon bound states to topology-dependent cooperative radiation effects. Addition of qubits to this waveguide system also enables direct quantum control over topological edge states that form in finite waveguide systems, useful for instance in constructing a topologically protected quantum communication channel. More broadly, our work demonstrates the opportunity that topological waveguide-QED systems offer in the synthesis and study of many-body states with exotic long-range quantum correlations.

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preprint2016arXiv

Narrow-linewidth homogeneous optical emitters in diamond nanostructures via silicon ion implantation

The negatively-charged silicon-vacancy ($\mathrm{SiV}^{-}$) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum information protocols. Until now, $\mathrm{SiV}^{-}$ centers with narrow optical linewidths and small inhomogeneous distributions of $\mathrm{SiV}^{-}$ transition frequencies have only been reported in samples doped with silicon during diamond growth. We present a technique for producing implanted $\mathrm{SiV}^{-}$ centers with nearly lifetime-limited optical linewidths and a small inhomogeneous distribution. These properties persist after nanofabrication, paving the way for incorporation of high-quality $\mathrm{SiV}^{-}$ centers into nanophotonic devices.

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preprint2014arXiv

All-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond

The silicon-vacancy ($\mathrm{SiV}^-$) color center in diamond has attracted attention due to its unique optical properties. It exhibits spectral stability and indistinguishability that facilitate efficient generation of photons capable of demonstrating quantum interference. Here we show high fidelity optical initialization and readout of electronic spin in a single $\mathrm{SiV}^-$ center with a spin relaxation time of $T_1=2.4\pm0.2$ ms. Coherent population trapping (CPT) is used to demonstrate coherent preparation of dark superposition states with a spin coherence time of $T_2^\star=35\pm3$ ns. This is fundamentally limited by orbital relaxation, and an understanding of this process opens the way to extend coherences by engineering interactions with phonons. These results establish the $\mathrm{SiV}^-$ center as a solid-state spin-photon interface.

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preprint2014arXiv

Electron-phonon processes of the silicon-vacancy centre in diamond

We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy ($\mathrm{SiV}^-$) centre in diamond. Optical transition line widths, transition wavelength and excited state lifetimes are measured for the temperature range 4-350 K. The ground state orbital relaxation rates are measured using time-resolved fluorescence techniques. A microscopic model of the thermal broadening in the excited and ground states of the $\mathrm{SiV}^-$ centre is developed. A vibronic process involving single-phonon transitions is found to determine orbital relaxation rates for both the ground and the excited states at cryogenic temperatures. We discuss the implications of our findings for coherence of qubit states in the ground states and propose methods to extend coherence times of $\mathrm{SiV}^-$ qubits.

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preprint2014arXiv

Indistinguishable photons from separated silicon-vacancy centers in diamond

We demonstrate that silicon-vacancy (SiV) centers in diamond can be used to efficiently generate coherent optical photons with excellent spectral properties. We show that these features are due to the inversion symmetry associated with SiV centers, and demonstrate generation of indistinguishable single photons from separate emitters in a Hong-Ou-Mandel (HOM) interference experiment.Prospects for realizing efficient quantum network nodes using SiV centers are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum interference of single photons from remote nitrogen-vacancy centers in diamond

We demonstrate quantum interference between indistinguishable photons emitted by two nitrogen-vacancy (NV) centers in distinct diamond samples separated by two meters. Macroscopic solid immersion lenses are used to enhance photon collection efficiency. Quantum interference is verified by measuring a value of the second-order cross-correlation function $g^{(2)}(0) = 0.35 \pm 0.04<0.5$. In addition, optical transition frequencies of two separated NV centers are tuned into resonance with each other by applying external electric fields. Extension of the present approach to generate entanglement of remote solid-state qubits is discussed.

0 citations0 reviewsNo code linkedOpen access