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Debabrata Samanta

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2 publications

preprint2021arXiv

Pressure induced emission enhancement and bandgap narrowing: experimental investigations and first principles theoretical simulations on a model halide perovskite

We report high-pressure photoluminescence, Raman scattering, and x-ray diffraction measurements on a lead-free halide perovskite Cs3Sb2Br9Cs_3Sb_2Br_9. At about 3 GPa, an electronic transition manifests itself through a broad minimum in linewidth, a maximum in the intensity of EgE_g, A1gA_{1g} Raman modes, and the unusual change in the c/ac/a ratio of the trigonal lattice. The large compressibility and observed Raman anomalies indicate to a soft material with strong electron-phonon coupling. The observed below bandgap broadband emission in the photoluminescence measurement indicates the recombination of self-trapped excitons. The initial blueshift of the photoluminescence peak reinforces itself to the redshift at around 3 GPa due to the change in the electronic landscape. A first order trigonal to a monoclinic structural transition is also seen at 8 GPa. The first-principles density functional theory (DFT) calculations reveal that the electronic transition is associated with direct-to-indirect bandgap transition due to changes in the hybridization of Sb−5sSb-5s and Br−4pBr-4p orbitals near the Fermi level in the valence band. The experimentally observed Raman modes are assigned to their symmetry using the density functional perturbation theory. In addition, the DFT calculations predict a 27.5\% reduction of the bandgap in the pressure range 0-8 GPa.

preprint2020arXiv

Pressure induced emergence of visible luminescence in Cs3Bi2Br9Cs_3Bi_2Br_9: Effect of structural distortion in optical behaviour

We report emergence of photoluminescence at room temperature in trigonal Cs3Bi2Br9Cs_3Bi_2Br_9 at high pressures. Enhancement in intensity with pressure is found to be driven by increase in distortion of BiBr6BiBr_6 octahedra and iso-structural transitions. Electronic band structure calculations show the sample in the high pressure phase to be an indirect band gap semiconductor. The luminescence peak profile show signatures related to the recombination of free and self trapped excitons, respectively. Blue shift of the both peaks till about 4.4 GPa are due to the exciton recombination before relaxation due to the decrease in exciton lifetime with scattering from phonons

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