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Davie Mtsuko

Davie Mtsuko appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall

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Published work

2 published item(s)

preprint2015arXiv

Observation of quantum transport features in graphene devices fabricated utilizing a nano-manipulating probe technique

A novel method for fast fabrication of mesoscopic multilayered graphene electronic devices utilizing nanoprobes to exfoliate graphite flakes is developed. The magnetoresistance of these devices exhibit pronounced Shubnikov-de Haas oscillations at magnetic fields above 4 T and at temperatures below 30 K. From the analysis of the SdH oscillations we show that multilayer graphene devices have a carrier density and effective mass (m*= 0.042me - 0.083me) comparable to those of bilayer and trilayer graphene. The quantum lifetime in this multilayered graphene is in the range 22 to 90 fs corresponding to a disorder-broadening of 5 to 15 meV.

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preprint2015arXiv

Observation of Shubnikov de Haas and Aharanov-Bohm oscillations in silicon nanowires

We record fine oscillations of 20 to 60 mT superimposed on larger oscillations having periodicity ~ 2 T at temperatures up to 100 K and fields up to 10 T from silicon nanowires. Having confirmed that these features appear from the edge states associated with skipping orbits at nanowire edges and confined pure orbits in the interior of the nanowires we derive electron effective mass of 0.001 me to 0.006 me, carrier lifetime in the range 3 to 19 fs and carrier density that varies from 2x10^11 cm^-2 to 9x10^12 cm^-2. However, at low temperature the observed oscillation amplitude invariant of the field is attributed to not only a strong size confinement and the pinning of orbits by impurities but also Aharanov Bohm (AB) oscillations due to edge-states that propagate quasi-ballistically through the nanowire. The overall oscillation on a linear positive magnetoresistance background can be attributed to temperature-dependent crossover of Shubnikov de Haas oscillations (SdHO) and AB oscillations in silicon nanowires.

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