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David J. Dunstan

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Published work

3 published item(s)

preprint2020arXiv

Easy computation of the Bayes Factor to fully quantify Occam's razor

The Bayes factor is the gold-standard figure of merit for comparing fits of models to data, for hypothesis selection and parameter estimation. However it is little used because it is computationally very intensive. Here it is shown how Bayes factors can be calculated accurately and easily, so that any least-squares or maximum-likelihood fits may be routinely followed by the calculation of Bayes factors to guide the best choice of model and hence the best estimations of parameters. Approximations to the Bayes factor, such as the Bayesian Information Criterion (BIC), are increasingly used. Occam's razor expresses a primary intuition, that parameters should not be multiplied unnecessarily, and that is quantified by the BIC. The Bayes factor quantifies two further intuitions. Models with physically-meaningful parameters are preferable to models with physically-meaningless parameters. Models that could fail to fit the data, yet which do fit, are preferable to models which span the data space and are therefore guaranteed to fit the data. The outcomes of using Bayes factors are often very different from traditional statistics tests and from the BIC. Three examples are given. In two of these examples, the easy calculation of the Bayes factor is exact. The third example illustrates the rare conditions under which it has some error and shows how to diagnose and correct the error.

preprint2015arXiv

The Hall-Petch effect as a manifestation of the general size effect

The experimental evidence for the Hall-Petch dependence of strength on the inverse square-root of grain size is reviewed critically. Both the classic data and more recent results are considered. While the data can be fitted to the inverse square-root dependence excellently (but using two free fitting parameters for each dataset), it is also consistent with a dependence on the simple inverse of grain size (with one free fitting parameter for each dataset). There have been difficulties, recognised for half-a-century, in explaining the inverse square-root expression. A Bayesian analysis shows that the data strongly supports the simple inverse expression proposed. Since this expression derives from underlying theory, it is also more readily explicable. It is concluded that the Hall-Petch effect is not to be explained by the variety of theories found in the literature, but is a manifestation of, or underlain by, the general size effect observed throughout micromechanics, due to the inverse relationship between the stress required and the space available for dislocation sources to operate.

preprint2014arXiv

Design rules for dislocation filters

The efficacy of strained layer threading dislocation filter structures in single crystal epitaxial layers is evaluated using numerical modeling for (001) face-centred cubic materials, such as GaAs or Si(1-x)Ge(x), and (0001) hexagonal materials such as GaN. We find that threading dislocation densities decay exponentially as a function of the strain relieved, irrespective of the fraction of threading dislocations that are mobile. Reactions between threading dislocations tend to produce a population that is a balanced mixture of mobile and sessile in (001) cubic materials. In contrast, mobile threading dislocations tend to be lost very rapidly in (0001) GaN, often with little or no reduction in the immobile dislocation density. The capture radius for threading dislocation interactions is estimated to be approx. 40nm using cross section transmission electron microscopy of dislocation filtering structures in GaAs monolithically grown on Si. We find that the minimum threading dislocation density that can be obtained in any given structure is likely to be limited by kinetic effects to approx. 1.0e+04 to 1.0e+05 per square cm.