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Dattatray J. Late

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Published work

5 published item(s)

preprint2015arXiv

A combined experimental and theoretical study of the electronic and vibrational properties of bulk and few-layer Td-WTe2

The recent discovery of non-saturating giant positive magnetoresistance in Td-WTe2 has aroused great interest in this material. We have studied the structural, electronic and vibrational properties of bulk and few-layer Td-WTe2 experimentally and theoretically. Spin-orbit coupling is found to govern the semi-metallic character of Td-WTe2. Its structural link with the metallic 1T form provides an understanding of its structural stability. We observe a metal to insulator transition and a change in the sign of the Seebeck coefficient around 373 K. Lattice vibrations in Td-WTe2 have been analyzed by first principle calculations. Out of the 33 possible zone-center Raman active modes, five distinct Raman bands are observed around 112, 118, 134, 165 and 212 cm-1 in bulk Td-WTe2. Based on symmetry analysis and the calculated Raman tensors, we assign the intense bands at 165 cm-1 and 212 cm-1 to the A_1^' and A_1^" modes respectively. We have examined the effect of temperature and the number of layers on the Raman spectrum. Most of the bands of Td-WTe2 stiffen, and the ratio of the integrated intensities of the A_1^" to A_1^' bands decreases in the few-layer sample, while all the bands soften in both bulk and few-layer samples with increasing temperature.

preprint2015arXiv

In situ characterisation of nanoscale electromechanical properties of quasi-two-dimensional MoS2 and MoO3

Precise manipulation of electronic band structures of two-dimensional (2D) transition metal dichalcogenides and oxides (TMD&Os) via localised strain engineering is an exciting avenue for exploiting their unique characteristics for electronics, optoelectronics, and nanoelectromechanical systems (NEMS) applications. This work experimentally demonstrates that mechanically-induced electrical transitions can be engineered in quasi-2D molybdenum disulphide (MoS2) and molybdenum trioxide (MoO3) using an in situ electrical nanoindentation technique. It is shown that localised strains on such quasi-2D layers can induce carrier transport alterations, thereby changing their electrical conduction behaviour. Such strain effects offer a potential tool for precisely manipulating the electronic transport properties of 2D TMD&Os, and understanding the interactions of the atomic electronic states in such layered materials.

preprint2015arXiv

Temperature dependent Raman spectroscopy of titanium trisulfide (TiS3) nanoribbons and nanosheets

Titanium trisulfide (TiS3) has recently attracted the interest of the 2D community as it presents a direct bandgap of ~1.0 eV, shows remarkable photoresponse, and has a predicted carrier mobility up to 10000 cm2V-1 s-1. However, a study of the vibrational properties of TiS3, relevant to understanding the electron-phonon interaction which can be the main mechanism limiting the charge carrier mobility, is still lacking. In this work, we take the first steps to study the vibrational properties of TiS3 through temperature dependent Raman spectroscopy measurements of TiS3 nanoribbons and nanosheets. Our investigation shows that all the Raman modes linearly soften (red shift) as the temperature increases from 88 K to 570 K, due to the anharmonic vibrations of the lattice which also includes contributions from the lattice thermal expansion. This softening with the temperature of the TiS3 modes is more pronounced than that observed in other 2D semiconductors such as MoS2, MoSe2, WSe2 or black phosphorus (BP). This marked temperature dependence of the Raman could be exploited to determine the temperature of TiS3 nanodevices by using Raman spectroscopy as a non-invasive and local thermal probe. Interestingly, the TiS3 nanosheets show a stronger temperature dependence of the Raman modes than the nanoribbons, which we attribute to a lower interlayer coupling in the nanosheets.

preprint2013arXiv

Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.

preprint2009arXiv

NO2 and Humidity Sensing Characteristics of Few-layer Graphene

Sensing characteristics of few-layer graphenes for NO2 and humidity have been investigated with graphene samples prepared by the thermal exfoliation of graphitic oxide (EG), conversion of nanodiamond (DG) and arc-discharge of graphite in hydrogen (HG). The sensitivity for NO2 is found to be highest with DG. Nitrogen-doped HG (n-type) shows increased sensitivity for NO2 compared to pure HG. The highest sensitivity for humidity is observed with HG. The sensing characteristics of graphene have been examined for different aliphatic alcohols and the sensitivity is found to vary with the chain length and branching.