BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Darsen D. Lu

Darsen D. Lu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
physics.app-phEmerging Technologies

Catalog footprint

What is connected

3works
2topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2020arXiv

A computationally efficient compact model for ferroelectric FETs for the simulation of online training of neural networks

Tri-gate ferroelectric FETs with Hf0.5Zr0.5O2 gate insulator for memory and neuromorphic applications are fabricated and characterized for multi-level operation. The conductance and threshold voltage exhibit highly linear and symmetric characteristics. A compact analytical model is developed to accurately capture FET transfer characteristics, including series resistance, coulombic scattering, and vertical field dependent mobility degradation effects, as well as the evolvement of threshold voltage and mobility with ferroelectric polarization switching. The model covers both sub-threshold and strong inversion operation. Additional measurements confirm ferroelectric switching as opposed to carrier-trapping-based memory operation. The compact model is implemented in a simulation platform for online training of deep neural networks.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Compact Device Models for FinFET and Beyond

Compact device models play a significant role in connecting device technology and circuit design. BSIM-CMG and BSIM-IMG are industry standard compact models suited for the FinFET and UTBB technologies, respectively. Its surface potential based modeling framework and symmetry preserving properties make them suitable for both analog/RF and digital design. In the era of artificial intelligence / deep learning, compact models further enhanced our ability to explore RRAM and other NVM-based neuromorphic circuits. We have demonstrated simulation of RRAM neuromorphic circuits with Verilog-A based compact model at NCKU. Further abstraction with macromodels is performed to enable larger scale machine learning simulation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Formation of Uniform Crystal and Reduction of Electrical Variation in HfZrO$_2$ Ferroelectric Memory by Thermal Engineering

In this paper we proclaim excellent variation control in Hf$_{0.5}$Zr$_{0.5}$O$_2$ based ferroelectric films obtained by germination of large ferroelectric domain via extended duration of thermal annealing. 10nm thick Hf$_{0.5}$Zr$_{0.5}$O$_2$ based ferroelectric capacitors with TiN as bottom and top electrodes are fabricated and characterized. The duration of rapid thermal annealing (RTA) is varied to observe its effect on crystal formation and device electrical properties at 700C. The device to device variation in terms of coercive voltage and peak capacitance are reduced from 0.4V to 0.01V and from 2*$10^{-5}$nF/cm$^2$ to 4*$10^{-6}$nF/cm$^2$, respectively, by increasing the RTA duration. High resolution transmission electron micrograph clearly shows large and uniform ferroelectric domains with RTA of 180 seconds. Extended duration of RTA likely allows uniform crystal to form, which mitigates the stochasticity of the distribution of ferroelectric and paraelectric domains, and deterministic switching has been infused. This improvement paves the way for implementing Hf$_{0.5}$Zr$_{0.5}$O$_2$ based deeply scaled devices for memory and steep slope device applications.

0 citations0 reviewsNo code linkedOpen access