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Researcher profile

Dario Narducci

Dario Narducci contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.other

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Published work

3 published item(s)

preprint2022arXiv

Exceptional Thermoelectric Power Factors in Hyperdoped, Fully Dehydrogenated Nanocrystalline Silicon Thin Films

Single-crystalline silicon is well known to be a poor thermoelectric material due to its high thermal conductivity. Most excellent research has focused on ways to decrease its thermal conductivity while retaining acceptably large power factors (PFs). Less effort has been spent to enhance the PF in poly and nanocrystalline silicon, instead. Here we show that in boron-hyperdoped nanocrystalline thin films PF may be increased up to 33 mW K$^{-2}$m$^{-1}$ at 300 K when hydrogen embedded in the film during deposition is removed. The result makes nanocrystalline Si a realistic competitor of Bi$_2$Te$_3$ for low-temperature heat harvesting, also due to its greater geo-availability and lower cost.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Nanostructured potential well/barrier engineering for realizing unprecedentedly large thermoelectric power factors

This work describes through semiclassical Boltzmann transport theory and simulation a novel nanostructured material design that can lead to unprecedentedly high thermoelectric power factors, with improvements of more than an order of magnitude compared to optimal bulk material power factors. The design is based on a specific grain/grain-boundary (potential well/barrier) engineering such that: i) carrier energy filtering is achieved using potential barriers, combined with ii) higher than usual doping operating conditions such that high carrier velocities and mean-free-paths are utilized, iii) minimal carrier energy relaxation after passing over the barriers to propagate the high Seebeck coefficient of the barriers into the potential wells, and importantly, iv) the formation of an intermediate dopant-free (depleted) region. The design consists thus of a three-region geometry, in which the high doping resides in the center/core of the potential well, with a dopant-depleted region separating the doped region from the potential barriers. It is shown that the filtering barriers are optimal when they mitigate the reduction in conductivity they introduce, and this can be done primarily when they are clean from dopants during the process of filtering. The potential wells, on the other hand, are optimal when they mitigate the reduced Seebeck they introduce by: i) not allowing carrier energy relaxation, and importantly ii) by mitigating the reduction in mobility that the high concentration of dopant impurities cause. Dopant segregation, with clean dopant-depletion regions around the potential barriers, serves this key purpose of improved mobility towards the phonon-limited mobility levels in the wells. Using quantum transport simulations as well as semi-classical Monte Carlo simulations we also verify the important ingredients and validate this clean-filtering design.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Opportunities and challenges in the use of heavily doped polycrystalline silicon as a thermoelectric material. An experimental study

Large-volume deployment of Si-based Seebeck generators can be foreseen only if polycrystalline rather than single crystalline materials can be actually used. The aim of this study was therefore to verify whether polycrystalline Si films deposited on top of a SiO$_2$ insulating layer can develop interesting thermoelectric power factors. We prepared 450-nm thick heavily boron doped polysilicon layers, setting the initial boron content in the film to be in excess of the boron solubility in polycrystalline silicon at 1000 °C. Isochronal thermal annealings were then used to modify the B$_{Si}$ content by precipitation. Quite unexpectedly, a concurrent increase of the thermoelectric power and of the conductivity was observed for heat treatments at temperatures above 800 °C. Upon annealing at 1000 °C we found a power factor $P$ of 13 mW K$^{-2}$ m$^{-1}$, more than three times higher than previously reported $P$ for Si nanowires. These findings could be explained observing that degenerate polysilicon displays a remarkable enhancement of its Seebeck coefficient as an effect of the large amount of boron it can dissolve. Band gap narrowing and band tailing modify the density of states around the Fermi energy leading to a dramatic improvement of its log-derivative in the Mott equation. These results apparently point out an interesting direction for the development of Seebeck and Peltier devices sharing low cost and relatively high efficiency.

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