Researcher profile

Danis I. Badrtdinov

Danis I. Badrtdinov contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2024arXiv

Strong electron-phonon coupling and phonon-induced superconductivity in tetragonal C$_3$N$_4$ with hole doping

C$_3$N$_4$ is a recently discovered phase of carbon nitrides with the tetragonal crystal structure [D.Laniel $\textit{et al.}$, Adv. Mater. 2023, 2308030] that is stable at ambient conditions. C$_3$N$_4$ is a semiconductor exhibiting flat-band anomalies in the valence band, suggesting the emergence of many-body instabilities upon hole doping. Here, using state-of-the-art first-principles calculations we show that hole-doped C$_3$N$_4$ reveals strong electron-phonon coupling, leading to the formation of a gapped superconducting state. The phase transition temperatures turn out to be strongly dependent on the hole concentration. We propose that holes could be injected into C$_3$N$_4$ via boron doping which induces, according to our results, a rigid shift of the Fermi energy without significant modification of the electronic structure. Based on the electron-phonon coupling and Coulomb pseudopotential calculated from first principles, we conclude that the boron concentration of 6 atoms per nm$^3$ would be required to reach the critical temperature of $\sim$36 K at ambient pressure.

preprint2022arXiv

Quantum embedding methods for correlated excited states of point defects: Case studies and challenges

A quantitative description of the excited electronic states of point defects and impurities is crucial for understanding materials properties, and possible applications of defects in quantum technologies. This is a considerable challenge for computational methods, since Kohn-Sham density-functional theory (DFT) is inherently a ground state theory, while higher-level methods are often too computationally expensive for defect systems. Recently, embedding approaches have been applied that treat defect states with many-body methods, while using DFT to describe the bulk host material. We implement such an embedding method, based on Wannierization of defect orbitals and the constrained random-phase approximation approach, and perform systematic characterization of the method for three distinct systems with current technological relevance: a carbon dimer replacing a B and N pair in bulk hexagonal BN (C$_{\text{B}}$C$_{\text{N}}$), the negatively charged nitrogen-vacancy center in diamond (NV$^-$), and an Fe impurity on the Al site in wurtzite AlN ($\text{Fe}_{\text{Al}}$). For C$_{\text{B}}$C$_{\text{N}}$ we show that the embedding approach gives many-body states in agreement with analytical results on the Hubbard dimer model, which allows us to elucidate the effects of the DFT functional and double-counting correction. For the NV$^-$ center, our method demonstrates good quantitative agreement with experiments for the zero-phonon line of the triplet-triplet transition. Finally, we illustrate challenges associated with this method for determining the energies and orderings of the complex spin multiplets in $\text{Fe}_{\text{Al}}$.

preprint2020arXiv

Control of magnetic interactions between surface adatoms via orbital repopulation

We propose a reversible mechanism for switching Heisenberg-type exchange interactions between deposited transition metal adatoms from ferromagnetic to antiferromagnetic. Using first-principles calculations, we show that this mechanism can be realized for cobalt atoms on the surface of black phosphorus by making use of electrically-controlled orbital repopulation, as recently demonstrated by scanning probe techniques [Nat. Commun. 9, 3904 (2018)]. We find that field-induced repopulation not only affects the spin state, but also causes considerable modification of exchange interaction between adatoms, including its sign. Our model analysis demonstrates that variable adatom-substrate hybridization is a key factor responsible for this modification. We perform quantum simulations of inelastic tunneling characteristics and discuss possible ways to verify the proposed mechanism experimentally.

preprint2020arXiv

SrCu$_2$(BO$_3$)$_2$ under pressure: a first-principle study

Using density-functional theory (DFT) band-structure calculations, we study the crystal structure, the lattice dynamics, and the magnetic interactions in the Shastry-Sutherland magnet SrCu$_2$(BO$_3$)$_2$ under pressure, concentrating on experimentally relevant pressures up to 4 GPa. All tendencies inside the candidate intermediate phases are thoroughly worked out, including specific predictions for some Raman active phonon modes that could be used to pin down the nature of the intermediate phase.