Researcher profile

Daniele Pullini

Daniele Pullini contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - Baseline
2works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2013arXiv

A novel picture for charge transport interpretation in epitaxial manganite thin films

Transport characterizations of epitaxial La0.7Sr0.3MnO3 thin films in the thickness range 5-40 nm and 25-410 K temperature interval have been accurately collected. We show that taking into account polaronic effects allows to achieve the best ever fitting of the transport curves in the whole temperature range. The Current Carriers Density Collapse picture accurately accounts for the properties variation across the metal-insulator-transition. The electron-phonon coupling parameter estimations are in a good agreement with theoretical predictions. The results promote a clear and straightforward quantitative description of the manganite films involved in charge transport device applications.

preprint2012arXiv

Conditions for the growth of smooth La0.7Sr0.3MnO3 thin films by pulsed electron ablation

We report on the optimisation of the growth conditions of manganite La0.7Sr0.3MnO3 (LSMO) thin films prepared by Channel Spark Ablation (CSA). CSA belongs to pulsed electron deposition methods and its energetic and deposition parameters are quite similar to those of pulsed laser deposition. The method has been already proven to provide manganite films with good magnetic properties, but the films were generally relatively rough (a few nm coarseness). Here we show that increasing the oxygen deposition pressure with respect to previously used regimes, reduces the surface roughness down to unit cell size while maintaining a robust magnetism. We analyse in detail the effect of other deposition parameters, like accelerating voltage, discharging energy, and temperature and provide on this basis a set of optimal conditions for the growth of atomically flat films. The thicknesses for which atomically flat surface was achieved is as high as about 10-20 nm, corresponding to films with room temperature magnetism. We believe such magnetic layers represent appealing and suitable electrodes for various spintronic devices.