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Daniel Reisinger

Daniel Reisinger appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2022arXiv

Can We Replicate Real Human Behaviour Using Artificial Neural Networks?

Agent-based modelling is a powerful tool when simulating human systems, yet when human behaviour cannot be described by simple rules or maximising one's own profit, we quickly reach the limits of this methodology. Machine learning has the potential to bridge this gap by providing a link between what people observe and how they act in order to reach their goal. In this paper we use a framework for agent-based modelling that utilizes human values like fairness, conformity and altruism. Using this framework we simulate a public goods game and compare to experimental results. We can report good agreement between simulation and experiment and furthermore find that the presented framework outperforms strict reinforcement learning. Both the framework and the utility function are generic enough that they can be used for arbitrary systems, which makes this method a promising candidate for a foundation of a universal agent-based model.

preprint2010arXiv

Novel Multifunctional Materials Based on Oxide Thin Films and Artificial Heteroepitaxial Multilayers

Transition metal oxides show fascinating physical properties such as high temperature superconductivity, ferro- and antiferromagnetism, ferroelectricity or even multiferroicity. The enormous progress in oxide thin film technology allows us to integrate these materials with semiconducting, normal conducting, dielectric or non-linear optical oxides in complex oxide heterostructures, providing the basis for novel multi-functional materials and various device applications. Here, we report on the combination of ferromagnetic, semiconducting, metallic, and dielectric materials properties in thin films and artificial heterostructures using laser molecular beam epitaxy. We discuss the fabrication and characterization of oxide-based ferromagnetic tunnel junctions, transition metal-doped semiconductors, intrinsic multiferroics, and artificial ferroelectric/ferromagetic heterostructures - the latter allow for the detailed study of strain effects, forming the basis of spin-mechanics. For characterization we use X-ray diffraction, SQUID magnetometry, magnetotransport measurements, and advanced methods of transmission electron microscopy with the goal to correlate macroscopic physical properties with the microstructure of the thin films and heterostructures.