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Daniel May

Daniel May contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Analytical and Numerical study of the out-of-equilibrium current through a helical edge coupled to a magnetic impurity

We study the conductance of a time-reversal symmetric helical electronic edge coupled antiferromagnetically to a magnetic impurity, employing analytical and numerical approaches. The impurity can reduce the perfect conductance $G_0$ of a noninteracting helical edge by generating a backscattered current. The backscattered steady-state current tends to vanish below the Kondo temperature $T_K$ for time-reversal symmetric setups. We show that the central role in maintaining the perfect conductance is played by a global $U(1)$ symmetry. This symmetry can be broken by an anisotropic exchange coupling of the helical modes to the local impurity. Such anisotropy, in general, dynamically vanishes during the renormalization group (RG) flow to the strong coupling limit at low-temperatures. The role of the anisotropic exchange coupling is further studied using the time-dependent Numerical Renormalization Group (TD-NRG) method, uniquely suitable for calculating out-of-equilibrium observables of strongly correlated setups. We investigate the role of finite bias voltage and temperature in cutting the RG flow before the isotropic strong-coupling fixed point is reached, extract the relevant energy scales and the manner in which the crossover from the weakly interacting regime to the strong-coupling backscattering-free screened regime is manifested. Most notably, we find that at low temperatures the conductance of the backscattering current follows a power-law behavior $G\sim (T/T_K)^2$, which we understand as a strong nonlinear effect due to time-reversal symmetry breaking by the finite-bias.

preprint2016arXiv

Carrier induced ferromagnetism in the insulating Mn doped III-V semiconductor InP

Although InP and GaAs have very similar band-structure their magnetic properties appear to drastically differ. Critical temperatures in (In,Mn)P are much smaller than that of (Ga,Mn)As and scale linearly with Mn concentration. This is in contrast to the square root behaviour found in (Ga,Mn)As. Moreover the magnetization curve exhibits an unconventional shape in (In,Mn)P contrasting with the conventional one of well annealed (Ga,Mn)As. By combining several theoretical approaches, the nature of ferromagnetism in Mn doped InP is investigated. It appears that the magnetic properties are essentially controlled by the position of the Mn acceptor level. Our calculations are in excellent agreement with recent measurements for both critical temperatures and magnetizations. The results are only consistent with a Fermi level lying in an impurity band, ruling out the possibility to understand the physical properties of Mn doped InP within the valence band scenario. The quantitative success found here reveals a predictive tool of choice that should open interesting pathways to address magnetic properties in other compounds