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Daniel I. Bilc

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cond-mat.mtrl-sci

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preprint2016arXiv

First-principles Modelling of SrTiO3 based Oxides for Thermoelectric Applications

Using first-principles electronic structure calculations, we studied the electronic and thermoelectric properties of SrTiO3 based oxide materials and their nanostructures identifying those nanostructures which possess highly anisotropic electronic bands. We showed recently that highly anisotropic flat-and-dispersive bands can maximize the thermoelectric power factor, and at the same time they can produce low dimensional electronic transport in bulk semiconductors. Although most of the considered nanostructures show such highly anisotropic bands, their predicted thermoelectric performance is not improved over that of SrTiO3. Besides highly anisotropic character, we emphasize the importance of the large weights of electronic states participating in transport and the small effective mass of charge carriers along the transport direction. These requirements may be better achieved in binary transition metal oxides than in ABO3 perovskite oxide materials.

preprint2016arXiv

High field properties of typical perovskite ferroelectrics by first-principles modeling

Using first-principles calculations, we estimated the impact of large applied electric E fields on the structural, dielectric, and ferroelectric properties of typical ferroelectrics. At large fields, the structural parameters change significantly, decreasing the strain between the different structural phases. This effect favours a polarization rotation model for ferroelectric switching in which the electronic polarization rotates between the directions of tetragonal, rhombohedral and orthorhombic phases. We estimate coercive fields E_c ~31 MV/m and ~52 MV/m at zero temperature for bulk ferroelectric monodomains of BaTiO3 and PbTiO3, respectively. The dielectric permittivity and tunability of BaTiO3 are the least affected at large fields, making this material attractive for applications in electronics and energy storage.

preprint2015arXiv

Low-Dimensional Transport and Large Thermoelectric Power Factors in Bulk Semiconductors by Band Engineering of Highly Directional Electronic States

Thermoelectrics are promising to address energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanostructures or the introduction of resonant states were suggested as possible solutions to this paradox but with limited success. Here, we propose an original approach to fulfill both requirements in bulk semiconductors. It exploits the highly-directional character of some orbitals to engineer the band-structure and produce a type of low-dimensional transport similar to that targeted in nanostructures, while retaining isotropic properties. Using first-principles calculations, the theoretical concept is demonstrated in Fe$_2$YZ Heusler compounds, yielding power factors 4-5 times larger than in classical thermoelectrics at room temperature. Our findings are totally generic and rationalize the search of alternative compounds with a similar behavior. Beyond thermoelectricity, these might be relevant also in the context of electronic, superconducting or photovoltaic applications.

preprint2012arXiv

First-principles modeling of the thermoelectric properties of SrTiO$_3$/SrRuO$_3$ superlattices

Using a combination of first-principles simulations, based on the density functional theory and Boltzmann's semiclassical theory, we have calculated the transport and thermoelectric properties of the half-metallic two dimensional electron gas confined in single SrRuO$_3$ layers of SrTiO$_3$/SrRuO$_3$ periodic superlattices. Close to the Fermi energy we find that the semiconducting majority spin channel displays a very large in-plane component of the Seebeck tensor at room temperature, $S$ = 1500 $μ$V/K, and the minority spin channel shows good in-plane conductivity $σ$ = 2.5 (m$Ω$cm)$^{-1}$. However, contrary to the expectation of Hicks and Dresselhaus model about enhanced global thermoelectric properties due to the confinement of the metallic electrons, we find that the total power factor and thermoelectric figure of merit for reduced doping is too small for practical applications. The reason for this failure can be traced back on the electronic structure of the interfacial gas, which departs from the free electron behaviour on which the model was based. The evolution of the electronic structure, electrical conductivity, Seebeck coefficient, and power factor as a function of the chemical potential is explained by a simplified tight-binding model. We find that the electron gas in our system is composed by a pair of one dimensional electron gases orthogonal to each other. This reflects the fact the physical dimensionality of the electronic system can be even smaller than that of the spacial confinement of the carriers.

preprint2012arXiv

Highly-confined spin-polarized two-dimensional electron gas in SrTiO$_{3}$/SrRuO$_{3}$ superlattices

We report first principles characterization of the structural and electronic properties of (SrTiO$_{3}$)$_{5}$/(SrRuO$_{3}$)$_{1}$ superlattices. We show that the system exhibits a spin-polarized two-dimensional electron gas, extremely confined to the 4$d$ orbitals of Ru in the SrRuO$_{3}$ layer. Every interface in the superlattice behaves as a minority-spin half-metal ferromagnet, with a magnetic moment of $μ$ = 2.0 $μ_{\rm B}$/SrRuO$_{3}$ unit. The shape of the electronic density of states, half metallicity and magnetism are explained in terms of a simplified tight-binding model, considering only the $t_{2g}$ orbitals plus (i) the bi-dimensionality of the system, and (ii) strong electron correlations.

preprint2011arXiv

Electronic and thermoelectric properties of Fe2VAl: The role of defects and disorder

Using first-principles calculations, we show that Fe2VAl is an indirect band gap semiconductor. Our calculations reveal that its, sometimes assigned, semimetallic character is not an intrinsic property but originates from the antisite defects and site disorder, which introduce localized ingap and resonant states changing the electronic properties close to band gap. These states negatively affect the thermopower S and power factor PF=S^2σ, decreasing the good thermoelectric performance of intrinsic Fe2VAl.