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Daniel Duffy

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Published work

2 published item(s)

preprint2022arXiv

Interfacial metric mechanics: stitching patterns of shape change in active sheets

A flat sheet programmed with a planar pattern of spontaneous shape change will morph into a curved surface. Such metric mechanics is seen in growing biological sheets, and may be engineered in actuating soft matter sheets such as phase-changing liquid crystal elastomers (LCEs), swelling gels and inflating baromorphs. Here, we show how to combine multiple patterns in a sheet by stitching regions of different shape changes together piecewise along interfaces. This approach allows simple patterns to be used as building blocks, and enables the design of multi-material or active/passive sheets. We give a general condition for an interface to be geometrically compatible, and explore its consequences for LCE/LCE, gel/gel, and active/passive interfaces. In contraction/elongation systems such as LCEs, we find an infinite set of compatible interfaces between any pair of patterns along which the metric is discontinuous, and a finite number across which the metric is continuous. As an example, we find all possible interfaces between pairs of LCE logarithmic spiral patterns. In contrast, in isotropic systems such as swelling gels, only a finite number of continuous interfaces are available, greatly limiting the potential of stitching. In both continuous and discontinuous cases, we find the stitched interfaces generically carry singular Gaussian curvature, leading to intrinsically curved folds in the actuated surface. We give a general expression for the distribution of this curvature, and a more specialized form for interfaces in LCE patterns. The interfaces thus also have rich geometric and mechanical properties in their own right.

preprint1997arXiv

Hole Doping Evolution of the Quasiparticle Band in Models of Strongly Correlated Electrons for the High-T_c Cuprates

Quantum Monte Carlo (QMC) and Maximum Entropy (ME) techniques are used to study the spectral function $A({\bf p},ω)$ of the one band Hubbard model in strong coupling including a next-nearest-neighbor electronic hopping with amplitude $t'/t= -0.35$. These values of parameters are chosen to improve the comparison of the Hubbard model with angle-resolved photoemission (ARPES) data for $Sr_2 Cu O_2 Cl_2$. A narrow quasiparticle (q.p.) band is observed in the QMC analysis at the temperature of the simulation $T=t/3$, both at and away from half-filling. Such a narrow band produces a large accumulation of weight in the density of states at the top of the valence band. As the electronic density $< n >$ decreases further away from half-filling, the chemical potential travels through this energy window with a large number of states, and by $< n > \sim 0.70$ it has crossed it entirely. The region near momentum $(0,π)$ and $(π,0)$ in the spectral function is more sensitive to doping than momenta along the diagonal from $(0,0)$ to $(π,π)$. The evolution with hole density of the quasiparticle dispersion contains some of the features observed in recent ARPES data in the underdoped regime. For sufficiently large hole densities the ``flat'' bands at $(π,0)$ cross the Fermi energy, a prediction that could be tested with ARPES techniques applied to overdoped cuprates. The population of the q.p. band introduces a {\it hidden} density in the system which produces interesting consequences when the quasiparticles are assumed to interact through antiferromagnetic fluctuations and studied with the BCS gap equation formalism. In particular, a region of extended s-wave is found to compete with d-wave in the overdoped regime, i.e. when the chemical potential has almost entirely crossed the q.p.