Researcher profile

Dangli Gao

Dangli Gao contributes to research discovery and scholarly infrastructure.

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Published work

1 published item(s)

preprint2026arXiv

Modulating anomalous thermal quenching behavior of stimulation luminescence via high-orbit electronic satellite-stabilized Trap state in germanate-based phosphors for 5D optical data storage

Persistent luminescence (PersL) materials, widely used in emergency lighting and information storage, are primarily employed at room temperature. However, their luminescent performance deteriorates sharply at high temperatures. Herein, a serials of Mg2GeO4:Ti4+,Ln3+ (Ln = Tb, Eu) phosphors demonstrated anomalous thermal quenching PersL due to the temperature-dependent Fermi-Dirac distribution of bound charge carriers of Ti4+Mg2+ as remote electron traps and VMg2+ as hole traps. The high carrier retention rate of phosphors is attributed to the ability of Ti4+Mg2+ positive charge center to strongly trap non-bonding electrons over a long range (about 20 angstroms) as the electronic satellite for its stable operation. Under external optical/thermal stimulation, the released electrons and holes recombine at the different luminescent levels of Tb3+, resulting in the emission of different PersL branching ratios. Using these phosphors, we have developed 5D optical data storage (2D plane + trap depth + temperature + time) and the encrypted engine program for high-temperature aerospace engines. This study reveals the energy storage process of long-range trapping and releasing electrons by Ti4+ electron traps, and provides a new design concept for the design of PersL materials.