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Dan Jian

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cond-mat.str-el cond-mat.mtrl-sci

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preprint2022arXiv

The effect of $f$-$c$ hybridization on the $γ\rightarrowα$ phase transition of cerium studied by lanthanum doping

The hybridization between the localized 4$f$ level ($f$) with conduction ($c$) states in $γ$-Ce upon cooling has been previously revealed in single crystalline thin films experimentally and theoretically, whereas its influence on the $γ\rightarrowα$ phase transition was not explicitly verified, due to the fact that the phase transition happened in the bulk-layer, leaving the surface in the $γ$ phase. Here in our work, we circumvent this issue by investigating the effect of alloying addition of La on Ce, by means of crystal structure, electronic transport and ARPES measurements, together with a phenomenological periodic Anderson model and a modified Anderson impurity model. Our current researches indicate that the weakening of $f$-$c$ hybridization is the major factor in the suppression of $γ\rightarrowα$ phase transition by La doping. The consistency of our results with the effects of other rare earth and actinide alloying additions on the $γ\rightarrowα$ phase transition of Ce is also discussed. Our work demonstrates the importance of the interaction of $f$ and $c$ electrons in understanding the unconventional phase transition in Ce, which is intuitive for further researches on other rare earth and actinide metals and alloys with similar phase transition behaviors.

preprint2020arXiv

Kondo scenario of the γ-α phase transition in single crystalline Cerium thin films

The physical mechanism driving the $γ$-$α$ phase transition of face-centre-cubic (fcc) cerium (Ce) remains controversial until now. In this work, high quality single crystalline fcc-Ce thin films were grown on Graphene/6$H$-SiC(0001) substrate, and explored by XRD and ARPES measurement. XRD spectra showed a clear $γ$-$α$ phase transition at $T_{γ-α}\approx$ 50 K, which is retarded by strain effect from substrate comparing with $T_{γ-α}$ (about 140 K) of the bulk Ce metal. However, APRES spectra did not show any signature of $α$-phase emerging in the surface-layer from 300 K to 17 K, which implied that $α$-phase might form at the bulk-layer of our Ce thin films. Besides, an evident Kondo dip near Fermi energy was observed in the APRES spectrum at 80 K, indicting the formation of Kondo singlet states in $γ$-Ce. Furthermore, the DFT+DMFT calculations were performed to simulate the electronic structures and the theoretical spectral functions agreed well with the experimental ARPES spectra. In $γ$-Ce, the behavior of the self-energy's imaginary part at low frequency not only confirmed that the Kondo singlet states emerged at $T_{\rm KS} \geq 80$ K, but also implied that they became coherent states at a lower characteristic temperature ($T_{\rm coh}\sim 40$ K) due to the indirect RKKY interaction among $f$-$f$ electrons. Besides, $T_{\rm coh}$ from the theoretical simulation was close to $T_{γ-α}$ from the XRD spectra. These issues suggested that the Kondo scenario might play an important role in the $γ$-$α$ phase transition of cerium thin films.