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Damir R. Islamov

Damir R. Islamov contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2016arXiv

The charge transport mechanism and electron trap nature in thermal oxide on silicon

The charge transport mechanism of electron via traps in amorphous SiO$_2$ has been studied. Electron transport is limited by phonon-assisted tunneling between traps. Thermal and optical trap energies $W_\mathrm{t}=1.6$ eV, $W_\mathrm{opt}=3.2$ eV, respectively, were determined. Charge flowing leads to oxygen vacancies generation, and the leakage current increases due to the increase of charge trap density. Long-time annealing at high temperatures decreased the leakage current to initial values due to oxygen vacancies recombination with interstitial oxygen. It is found that the oxygen vacancies act as electron traps in SiO$_2$.

preprint2013arXiv

Origin of defects responsible for charge transport in resistive random access memory based on hafnia

A promising candidate for universal memory, which would involve combining the most favourable properties of both high-speed dynamic random access memory (DRAM) and non-volatile flash memory, is resistive random access memory (ReRAM). ReRAM is based on switching back and forth from a high-resistance state (HRS) to a low-resistance state (LRS). ReRAM cells are small, allowing for the creation of memory on the scale of terabits. One of the most promising materials for use as the active medium in resistive memory is hafnia (HfO$_2$). However, an unresolved physics is the nature of defects and traps that are responsible for the charge transport in HRS state of resistive memory. In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the HRS charge transport in resistive memory elements based on HfO$_2$. We also demonstrated that LRS transport occurs through a mechanism described according to percolation theory. Based on the model of multiphonon tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics were achieved. The thermal excitation energy of the traps in hafnia was determined based on the excitation spectrum and luminescence of the oxygen vacancies. The findings of this study demonstrate that in resistive memory elements using hafnia, the oxygen vacancies in hafnia play a key role in creating defects in HRS charge transport.