Source author record

E. V. Ivanova

E. V. Ivanova appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.stat-mech cond-mat.mes-hall hep-th

Catalog footprint

What is connected

4works

3topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2022arXiv

Model A of critical dynamics: 5-loop $\varepsilon$ expansion study

We have calculated the five-loop RG expansions of the $n$-component A model of critical dynamics in dimensions $d=4-\varepsilon$ within the Minimal Subtraction scheme. This is made possible by using the advanced diagram reduction method and the Sector Decomposition technique adapted to the problems of critical dynamics. The $\varepsilon$ expansions for the critical dynamic exponent $z$ for an arbitrary value of the order parameter dimension $n$ are derived. Based on these series, the numerical estimates of $z$ for different universality classes are extracted and compared with the results obtained within different theoretical and experimental methods.

preprint2021arXiv

Six-loop $\varepsilon$ expansion of three-dimensional $\text{U}(n)\times \text{U}(m)$ models

We analyze the Landau-Wilson field theory with $\text{U}(n)\times\text{U}(m)$ symmetry which describes the finite-temperature phase transition in QCD in the limit of vanishing quark masses with $n=m=N_f$ flavors and unbroken anomaly at the critical temperature. The six-loop expansions of the renormalization group functions are calculated within the Minimal Subtraction scheme in $4 - \varepsilon$ dimensions. The $\varepsilon$ series for the upper marginal dimensionality $n^{+}(m,4-\varepsilon)$ -- the key quantity of the theory -- are obtained and resummed by means of different approaches. The numbers found are compared with their counterparts obtained earlier within lower perturbative orders and the pseudo-$\varepsilon$ analysis of massive six-loop three-dimensional expansions. In particular, using an increase in the accuracy of numerical results for $n^{+}(m,3)$ by one order of magnitude, we strengthen the conclusions obtained within previous order in perturbation theory about fairness of the inequality $n^{+}(m,3)>m$. This, in turn, indicates the absence of a stable three-dimensional fixed point for $n=m$, and as a consequence a first-order kind of finite-temperature phase transition in light QCD.

preprint2021arXiv

The dynamic critical exponent $z$ for 2d and 3d Ising models from five-loop $ε$ expansion

We calculate the dynamic critical exponent $z$ for 2d and 3d Ising universality classes by means of minimally subtracted five-loop $\varepsilon$ expansion obtained for the one-component model A. This breakthrough turns out to be possible through the successful adaptation of the Sector Decomposition technique to the problems of critical dynamics. The obtained fifth perturbative order accompanied by the use of advanced resummation techniques for asymptotic series allows us to find highly accurate numerical estimates of $z$: for two- and three-dimensional cases we obtain $\boldsymbol{2.14(2)}$ and $\boldsymbol{2.0235(8)}$ respectively. The numbers found are in good agreement with recent results obtained using different approaches.

preprint2013arXiv

Origin of defects responsible for charge transport in resistive random access memory based on hafnia

A promising candidate for universal memory, which would involve combining the most favourable properties of both high-speed dynamic random access memory (DRAM) and non-volatile flash memory, is resistive random access memory (ReRAM). ReRAM is based on switching back and forth from a high-resistance state (HRS) to a low-resistance state (LRS). ReRAM cells are small, allowing for the creation of memory on the scale of terabits. One of the most promising materials for use as the active medium in resistive memory is hafnia (HfO$_2$). However, an unresolved physics is the nature of defects and traps that are responsible for the charge transport in HRS state of resistive memory. In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the HRS charge transport in resistive memory elements based on HfO$_2$. We also demonstrated that LRS transport occurs through a mechanism described according to percolation theory. Based on the model of multiphonon tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics were achieved. The thermal excitation energy of the traps in hafnia was determined based on the excitation spectrum and luminescence of the oxygen vacancies. The findings of this study demonstrate that in resistive memory elements using hafnia, the oxygen vacancies in hafnia play a key role in creating defects in HRS charge transport.