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Daichi Oka

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cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con

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preprint2020arXiv

Hard and soft x-ray photoemission spectroscopy study of the new Kondo system SmO thin film

SmO thin film is a new Kondo system showing a resistivity upturn around 10 K and was theoretically proposed to have a topologically nontrivial band structure. We have performed hard x-ray and soft x-ray photoemission spectroscopy to elucidate the electronic structure of SmO. From the Sm 3$d$ core-level spectra, we have estimated the valence of Sm to be $\sim$2.96, proving that the Sm has a mixed valence. The valence-band photoemission spectra exhibit a clear Fermi edge originating from the Sm 5$d$-derived band. The present finding is consistent with the theory suggesting a possible topological state in SmO and show that rare-earth monoxides or their heterostructures can be a new playground for the interplay of strong electron correlation and spin-orbit coupling.

preprint2020arXiv

Tetragonality induced superconductivity in anti-ThCr$_2$Si$_2$-type $RE_2$O$_2$Bi ($RE$ = rare earth) with Bi square net

We report a series of layered superconductors, anti-ThCr$_2$Si$_2$-type $RE_2$O$_2$Bi ($RE$ = rare earth), composed of electrically conductive Bi square nets and magnetic insulating $RE_2$O$_2$ layers. The superconductivity was induced by separating Bi square nets as a result of excess oxygen incorporation, irrespective of the presence of magnetic ordering in $RE_2$O$_2$ layers. Intriguingly, the transition temperature of all $RE_2$O$_2$Bi including nonmagnetic Y$_2$O$_2$Bi was approximately scaled by the unit cell tetragonality ($c$/$a$), implying a key role of relative separation of the Bi square nets to induce the superconductivity.

preprint2015arXiv

Intrinsic high electrical conductivity of stoichiometric SrNbO3 epitaxial thin films

SrVO3 and SrNbO3 are perovskite-type transition-metal oxides with the same d1 electronic configuration. Although SrNbO3 (4d1) has a larger d orbital than SrVO3 (3d1), the reported electrical resistivity of SrNbO3 is much higher than that of SrVO3, probably owing to nonstoichiometry. In this paper, we grew epitaxial, high-conductivity stoichiometric SrNbO3 using pulsed laser deposition. The growth temperature strongly affected the Sr/Nb ratio and the oxygen content of the films, and we obtained stoichiometric SrNbO3 at a very narrow temperature window around 630 $°$C. The stoichiometric SrNbO3 epitaxial thin films grew coherently on KTaO3 (001) substrates with high crystallinity. The room-temperature resistivity of the stoichiometric film was $2.82 {\times} 10^{-5} Ω$cm, one order of magnitude lower than the lowest reported value of SrNbO3 and comparable with that of SrVO3. We observed a T-square dependence of resistivity below $T^{\ast}$ = 180 K and non-Drude behavior in near-infrared absorption spectroscopy, attributable to the Fermi-liquid nature caused by electron correlation. Analysis of the T-square coefficient A of resistivity experimentally revealed that the 4d orbital of Nb that is larger than the 3d ones certainly contributes to the high electrical conduction of SrNbO3.