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Da-Shung Su

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physics.ins-det hep-ex

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preprint2022arXiv

Cryogenic digital data links for the liquid argon time projection chamber

In this paper we present the cryogenic functionality of the components of data links for the Liquid Argon Time Projection Chamber (LArTPC), a potential far site detector technology of the Long-Baseline Neutrino Experiment (LBNE). We have confirmed that an LVDS driver can drive a 20-meter CAT5E twisted pair up to 1 gigabit per second at the liquid nitrogen temperature (77 K). We have verified that a commercial-off-the-shelf (COTS) serializer, a laser diode driver, laser diodes, optical fibers and connectors, and field-programming gate arrays (FPGA's) continue to function at 77 K. A variety of COTS resistors and capacitors have been tested at 77 K. All tests we have conducted show that the cryogenic digital data links for the liquid argon time projection chamber are promising.

preprint2022arXiv

R&D Towards Cryogenic Optical Links

A number of critical active and passive components of optical links have been tested at 77 K or lower temperatures, demonstrating potential development of optical links operating inside the liquid argon time projection chamber (LArTPC) detector cryostat. A ring oscillator, individual MOSFETs, and a high speed 16:1 serializer fabricated in a commercial 0.25-um silicon-on-sapphire CMOS technology continued to function from room temperature to 4.2 K, 15 K, and 77 K respectively. Three types of laser diodes lase from room temperature to 77 K. Optical fibers and optical connectors exhibited minute attenuation changes from room temperature to 77 K.

preprint2013arXiv

Active inductor shunt peaking in high-speed VCSEL driver design

An all transistor active inductor shunt peaking structure has been used in a prototype of 8-Gbps high-speed VCSEL driver which is designed for the optical link in ATLAS liquid Argon calorimeter upgrade. The VCSEL driver is fabricated in a commercial 0.25-um Silicon-on-Sapphire (SoS) CMOS process for radiation tolerant purpose. The all transistor active inductor shunt peaking is used to overcome the bandwidth limitation from the CMOS process. The peaking structure has the same peaking effect as the passive one, but takes a small area, does not need linear resistors and can overcome the process variation by adjust the peaking strength via an external control. The design has been tapped out, and the prototype has been proofed by the preliminary electrical test results and bit error ratio test results. The driver achieves 8-Gbps data rate as simulated with the peaking. We present the all transistor active inductor shunt peaking structure, simulation and test results in this paper.