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D. Stornaiuolo

D. Stornaiuolo contributes to research discovery and scholarly infrastructure.

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Published work

11 published item(s)

preprint2022arXiv

Casimir energy for N superconducting cavities: a model for the YBCO (BSCCO)

In this paper we study the Casimir energy of a sample made by N cavities, with N >> 1, across the transition from the metallic to the superconducting phase of the constituting plates. After having characterized the energy for the configuration in which the layers constituting the cavities are made by dielectric and for the configuration in which the layers are made by plasma sheets, we concentrate our analysis on the latter. It represents the final step towards the macroscopic characterization of a "multi cavity" (with N large) necessary to fully understand the behaviour of the Casimir energy of a YBCO (or a BSCCO) sample across the transition. Our analysis is especially useful to the Archimedes experiment, aimed at measuring the interaction of the electromagnetic vacuum energy with a gravitational field. To this purpose, we aim at modulating the Casimir energy of a layered structure, the multi cavity, by inducing a transition from the metallic to the superconducting phase. After having characterized the Casimir energy of such a structure for both the metallic and the superconducting phase, we give an estimate of the modulation of the energy across the transition.

preprint2015arXiv

Breakdown of the escape dynamics in Josephson junctions

We have identified anomalous behavior of the escape rate out of the zero-voltage state in Josephson junctions with a high critical current density Jc. For this study we have employed YBa2Cu3O7-x grain boundary junctions, which span a wide range of Jc and have appropriate electrodynamical parameters. Such high Jc junctions, when hysteretic, do not switch from the superconducting to the normal state following the expected stochastic Josephson distribution, despite having standard Josephson properties such as a Fraunhofer magnetic field pattern. The switching current distributions (SCDs) are consistent with nonequilibrium dynamics taking place on a local rather than a global scale. This means that macroscopic quantum phenomena seem to be practically unattainable for high Jc junctions. We argue that SCDs are an accurate means to measure nonequilibrium effects. This transition from global to local dynamics is of relevance for all kinds of weak links, including the emergent family of nanohybrid Josephson junctions. Therefore caution should be applied in the use of such junctions in, for instance, the search for Majorana fermions.

preprint2015arXiv

Growth-induced electron mobility enhancement at the LaAlO$_3$/SrTiO$_3$ interface

We have studied the electronic properties of the 2D electron liquid present at the LaAlO$_3$/SrTiO$_3$ interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650°C exhibit the highest low temperature mobility ($\approx 10000 \textrm{ cm}^2/\textrm{Vs}$) and the lowest sheet carrier density ($\approx 5\times 10^{12} \textrm{ cm}^{-2}$). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800-900°C) display carrier densities in the range of $\approx 2-5 \times 10^{13} \textrm{ cm}^{-2}$ and mobilities of $\approx 1000 \textrm{ cm}^2/\textrm{Vs}$ at 4K. Reducing their carrier density by field effect to $8\times 10^{12} \textrm{ cm}^{-2}$ lowers their mobilites to $\approx 50 \textrm{ cm}^2/\textrm{Vs}$ bringing the conductance to the weak-localization regime.

preprint2015arXiv

Magneto-transport study of top- and back-gated LaAlO$_3$/SrTiO$_3$ heterostructures

We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO$_3$/SrTiO$_3$ heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the back gate strongly modifies the electron mobility while the top gate mainly varies the carrier density. The evolution of the spin-orbit interaction is also followed as a function of top and back gating.

preprint2015arXiv

Weak-localization and spin-orbit interaction in side-gate field effect devices at the LaAlO$_3$/SrTiO$_3$ interface

Using field effect devices with side gates, we modulate the 2 dimensional electron gas hosted at the LaAlO$_3$/SrTiO$_3$ interface to study the temperature and doping evolution of the magnetotransport. The analysis of the data reveals different transport regimes depending on the interplay between the different (elastic, inelastic, and spin-orbit) scattering times and their temperature dependencies. We find that the spin-orbit interaction strongly affects the low temperature transport in the normal state in a very large region of the phase diagram, extending beyond the superconducting dome.

preprint2014arXiv

Large modulation of the Shubnikov-de Haas oscillations by the Rashba interaction at the LaAlO$_{3}$/SrTiO$_{3}$ interface

We investigate the 2-dimensional Fermi surface of high-mobility LaAlO$_3$/SrTiO$_3$ interfaces using Shubnikov-de Haas oscillations. Our analysis of the oscillation pattern underscores the key role played by the Rashba spin-orbit interaction brought about by the breaking of inversion symmetry, as well as the dominant contribution of the heavy $d_{xz}$/$d_{yz}$ orbitals on electrical transport. We furthermore bring into light the complex evolution of the oscillations with the carrier density, which is tuned by the field effect.

preprint2013arXiv

In-plane electronic confinement in superconducting LaAlO$_3$/SrTiO$_3$ nanostructures

We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam lithography. Their detailed characterization shows that processing and confinement do not alter the transport parameters of the 2DEG. The devices exhibit superconducting behavior tunable by electric field effect. In the normal state, we measured universal conductance fluctuations, signature of phase-coherent transport in small structures. The achievement of reliable lateral confinement of the 2DEG opens the way to the realization of quantum electronic devices at the LaAlO$_3$/SrTiO$_3$ interface.

preprint2013arXiv

Origin of interface magnetism in BiMnO3/SrTiO3 and LaAlO3/SrTiO3 heterostructures

Possible ferromagnetism induced in otherwise non-magnetic materials has been motivating intense research in complex oxide heterostructures. Here we show that a confined magnetism is realized at the interface between SrTiO3 and two insulating polar oxides, BiMnO3 and LaAlO3. By using polarization dependent x-ray absorption spectroscopy, we find that in both cases the magnetic order is stabilized by a negative exchange interaction between the electrons transferred to the interface and local magnetic moments. These local magnetic moments are associated to Ti3+ ions at the interface itself for LaAlO3/SrTiO3 and to Mn3+ ions in the overlayer for BiMnO3/SrTiO3. In LaAlO3/SrTiO3 the induced magnetic moments are quenched by annealing in oxygen, suggesting a decisive role of oxygen vacancies in the stabilization of interfacial magnetism.

preprint2013arXiv

Resolving the effects of frequency dependent damping and quantum phase diffusion in YBa$_2$Cu$_3$O$_{7-x}$ Josephson junctions

We report on the study of the phase dynamics of high critical temperature superconductor Josephson junctions. We realized YBa$_2$Cu$_3$O$_{7-x}$ (YBCO) grain boundary (GB) biepitaxial junctions in the submicron scale, using low loss substrates, and analyzed their dissipation by comparing the transport measurements with Monte Carlo simulations. The behavior of the junctions can be fitted using a model based on two quality factors, which results in a frequency dependent damping. Moreover, our devices can be designed to have Josephson energy of the order of the Coulomb energy. In this unusual energy range, phase delocalization strongly influences the device's dynamics, promoting the transition to a quantum phase diffusion regime. We study the signatures of such a transition by combining the outcomes of Monte Carlo simulations with the analysis of the device's parameters, the critical current and the temperature behavior of the low voltage resistance $R_0$.

preprint2012arXiv

High critical-current density and scaling of phase-slip processes in YBaCuO nanowires

YBaCuO nanowires were reproducibly fabricated down to widths of 50 nm. A Au/Ti cap layer on YBCO yielded high electrical performance up to temperatures above 80 K in single nanowires. Critical current density of tens of MA/cm2 at T = 4.2 K and of 10 MA/cm2 at 77 K were achieved that survive in high magnetic fields. Phase-slip processes were tuned by choosing the size of the nanochannels and the intensity of the applied external magnetic field. Data indicate that YBCO nanowires are rather attractive system for the fabrication of efficient sensors, supporting the notion of futuristic THz devices.

preprint2007arXiv

Superconductivity in Sr2RuO4-Sr3Ru2O7 eutectic crystals

Superconducting behavior has been observed in the Sr2RuO4-Sr3Ru2O7 eutectic system as grown by the flux-feeding floating zone technique. A supercurrent flows across a single interface between Sr2RuO4 and Sr3Ru2O7 areas at distances that are far beyond those expected in a conventional proximity scenario. The current-voltage characteristics within the Sr3Ru2O7 macrodomain, as extracted from the eutectic, exhibit signatures of superconductivity in the bilayered ruthenate. Detailed microstructural, morphological and compositional analyses address issues on the concentration and the size of Sr2RuO4 inclusions within the Sr3Ru2O7 matrix. We speculate on the possibility of inhomogeneous superconductivity in the eutectic Sr3Ru2O7 and exotic pairing induced by the Sr2RuO4 inclusions.