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D. Stick

D. Stick appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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quant-phphysics.atom-phphysics.ins-det

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Published work

6 published item(s)

preprint2021arXiv

Entangling-gate error from coherently displaced motional modes of trapped ions

Entangling gates in trapped-ion quantum computing have primarily targeted stationary ions with initial motional distributions that are thermal and close to the ground state. However, future systems will likely incur significant non-thermal excitation due to, e.g., ion transport, longer operational times, and increased spatial extent of the trap array. In this paper, we analyze the impact of such coherent motional excitation on entangling-gate error by performing simulations of Molmer-Sorenson (MS) gates on a pair of trapped-ion qubits with both thermal and coherent excitation present in a shared motional mode at the start of the gate. We discover that a small amount of coherent displacement dramatically erodes gate performance in the presence of experimental noise, and we demonstrate that applying only limited control over the phase of the displacement can suppress this error. We then use experimental data from transported ions to analyze the impact of coherent displacement on MS-gate error under realistic conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Heating and ion transport in a Y-junction surface-electrode trap

We measure ion heating following transport throughout a Y-junction surface-electrode ion trap. By carefully selecting the trap voltage update rate during adiabatic transport along a trap arm, we observe minimal heating relative to the anomalous heating background. Transport through the junction results in an induced heating between 37 and 150 quanta in the axial direction per traverse. To reliably measure heating in this range, we compare the experimental sideband envelope, including up to fourth-order sidebands, to a theoretical model. The sideband envelope method allows us to cover the intermediate heating range inaccessible to the first-order sideband and Doppler recooling methods. We conclude that quantum information processing in this ion trap will likely require sympathetic cooling in order to support high fidelity gates after junction transport.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Design, Fabrication, and Experimental Demonstration of Junction Surface Ion Traps

We present the design, fabrication, and experimental implementation of surface ion traps with Y-shaped junctions. The traps are designed to minimize the pseudopotential variations in the junction region at the symmetric intersection of three linear segments. We experimentally demonstrate robust linear and junction shuttling with greater than one million round-trip shuttles without ion loss. By minimizing the direct line of sight between trapped ions and dielectric surfaces, negligible day-to-day and trap-to-trap variations are observed. In addition to high-fidelity single-ion shuttling, multiple-ion chains survive splitting, ion-position swapping, and recombining routines. The development of two-dimensional trapping structures is an important milestone for ion-trap quantum computing and quantum simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Heating rate and electrode charging measurements in a scalable, microfabricated, surface-electrode ion trap

We characterise the performance of a surface-electrode ion "chip" trap fabricated using established semiconductor integrated circuit and micro-electro-mechanical-system (MEMS) microfabrication processes which are in principle scalable to much larger ion trap arrays, as proposed for implementing ion trap quantum information processing. We measure rf ion micromotion parallel and perpendicular to the plane of the trap electrodes, and find that on-package capacitors reduce this to <~ 10 nm in amplitude. We also measure ion trapping lifetime, charging effects due to laser light incident on the trap electrodes, and the heating rate for a single trapped ion. The performance of this trap is found to be comparable with others of the same size scale.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Efficient Photoionization-Loading of Trapped Cadmium Ions with Ultrafast Pulses

Atomic cadmium ions are loaded into radiofrequency ion traps by photoionization of atoms in a cadmium vapor with ultrafast laser pulses. The photoionization is driven through an intermediate atomic resonance with a frequency-quadrupled mode-locked Ti:Sapphire laser that produces pulses of either 100 fsec or 1 psec duration at a central wavelength of 229 nm. The large bandwidth of the pulses photoionizes all velocity classes of the Cd vapor, resulting in high loading efficiencies compared to previous ion trap loading techniques. Measured loading rates are compared with a simple theoretical model, and we conclude that this technique can potentially ionize every atom traversing the laser beam within the trapping volume. This may allow the operation of ion traps with lower levels of background pressures and less trap electrode surface contamination. The technique and laser system reported here should be applicable to loading most laser-cooled ion species.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Ion Trap in a Semiconductor Chip

The electromagnetic manipulation of isolated atoms has led to many advances in physics, from laser cooling and Bose-Einstein condensation of cold gases to the precise quantum control of individual atomic ion. Work on miniaturizing electromagnetic traps to the micrometer scale promises even higher levels of control and reliability. Compared with 'chip traps' for confining neutral atoms, ion traps with similar dimensions and power dissipation offer much higher confinement forces and allow unparalleled control at the single-atom level. Moreover, ion microtraps are of great interest in the development of miniature mass spectrometer arrays, compact atomic clocks, and most notably, large scale quantum information processors. Here we report the operation of a micrometer-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. We confine, laser cool, and measure heating of a single 111Cd+ ion in an integrated radiofrequency trap etched from a doped gallium arsenide (GaAs) heterostructure.

0 citations0 reviewsNo code linkedOpen access