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D. Stick

D. Stick contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Entangling-gate error from coherently displaced motional modes of trapped ions

Entangling gates in trapped-ion quantum computing have primarily targeted stationary ions with initial motional distributions that are thermal and close to the ground state. However, future systems will likely incur significant non-thermal excitation due to, e.g., ion transport, longer operational times, and increased spatial extent of the trap array. In this paper, we analyze the impact of such coherent motional excitation on entangling-gate error by performing simulations of Molmer-Sorenson (MS) gates on a pair of trapped-ion qubits with both thermal and coherent excitation present in a shared motional mode at the start of the gate. We discover that a small amount of coherent displacement dramatically erodes gate performance in the presence of experimental noise, and we demonstrate that applying only limited control over the phase of the displacement can suppress this error. We then use experimental data from transported ions to analyze the impact of coherent displacement on MS-gate error under realistic conditions.

preprint2011arXiv

Design, Fabrication, and Experimental Demonstration of Junction Surface Ion Traps

We present the design, fabrication, and experimental implementation of surface ion traps with Y-shaped junctions. The traps are designed to minimize the pseudopotential variations in the junction region at the symmetric intersection of three linear segments. We experimentally demonstrate robust linear and junction shuttling with greater than one million round-trip shuttles without ion loss. By minimizing the direct line of sight between trapped ions and dielectric surfaces, negligible day-to-day and trap-to-trap variations are observed. In addition to high-fidelity single-ion shuttling, multiple-ion chains survive splitting, ion-position swapping, and recombining routines. The development of two-dimensional trapping structures is an important milestone for ion-trap quantum computing and quantum simulations.