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Researcher profile

D. Ravelosona

D. Ravelosona contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

4 published item(s)

preprint2018arXiv

The magnetic origin of the metal-insulator transition in V2O3: Mott meets Slater

Despite decades of experimental and theoretical efforts, the origin of metal-insulator transitions (MIT) in strongly-correlated materials is one of the main longstanding problems in condensed matter physics. An archetypal example is V2O3, where electronic, structural and magnetic phase transitions occur simultaneously. This remarkable concomitance makes the understanding of the origin of the MIT a challenge due to the many degrees of freedom at play. In this work, we demonstrate that magnetism plays the key dominant role. By acting on the magnetic degree of freedom, we reveal an anomalous behaviour of the magnetoresistance of V2O3, which provides strong evidence that the origin of the MIT in V2O3 is the opening of an antiferromagnetic gap in the presence of strong electronic correlations.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Measuring the magnetic moment density in patterned ultrathin ferromagnets with submicron resolution

We present a new approach to infer the surface density of magnetic moments $I_s$ in ultrathin ferromagnetic films with perpendicular anisotropy. It relies on quantitative stray field measurements with an atomic-size magnetometer based on the nitrogen-vacancy center in diamond. The method is applied to microstructures patterned in a 1-nm-thick film of CoFeB. We report measurements of $I_s$ with a few percent uncertainty and a spatial resolution in the range of $(100$ nm)$^2$, an improvement by several orders of magnitude over existing methods. As an example of application, we measure the modifications of $I_s$ induced by local irradiation with He$^+$ ions in an ultrathin ferromagnetic wire. This method offers a new route to study variations of magnetic properties at the nanoscale.

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preprint2014arXiv

The nature of domain walls in ultrathin ferromagnets revealed by scanning nanomagnetometry

The recent observation of current-induced domain wall (DW) motion with large velocity in ultrathin magnetic wires has opened new opportunities for spintronic devices. However, there is still no consensus on the underlying mechanisms of DW motion. Key to this debate is the DW structure, which can be of Bloch or Néel type, and dramatically affects the efficiency of the different proposed mechanisms. To date, most experiments aiming to address this question have relied on deducing the DW structure and chirality from its motion under additional in-plane applied fields, which is indirect and involves strong assumptions on its dynamics. Here we introduce a general method enabling direct, in situ, determination of the DW structure in ultrathin ferromagnets. It relies on local measurements of the stray field distribution above the DW using a scanning nanomagnetometer based on the Nitrogen-Vacancy defect in diamond. We first apply the method to a Ta/Co40Fe40B20(1 nm)/MgO magnetic wire and find clear signature of pure Bloch DWs. In contrast, we observe left-handed Néel DWs in a Pt/Co(0.6 nm)/AlOx wire, providing direct evidence for the presence of a sizable Dzyaloshinskii-Moriya interaction (DMI) at the Pt/Co interface. This method offers a new path for exploring interfacial DMI in ultrathin ferromagnets and elucidating the physics of DW motion under current.

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preprint2013arXiv

Measurement of magnetization using domain compressibility in CoFeB films with perpendicular anisotropy

We present a method to map the saturation magnetization of soft ultrathin films with perpendicular anisotropy, and we illustrate it to assess the compositional dependence of the magnetization of CoFeB(1 nm)/MgO films. The method relies on the measurement of the dipolar repulsion of parallel domain walls that define a linear domain. The film magnetization is linked to the field compressibility of the domain. The method also yields the minimal distance between two walls before their merging, which sets a practical limit to the storage density in spintronic devices using domain walls as storage entities.

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