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D. P. Arovas

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Published work

7 published item(s)

preprint2011arXiv

Integer Quantum Hall Effect in Trilayer Graphene

The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and bi-layer graphene. Here we report on the IQHE in a new system: trilayer graphene. Experimental data are compared with self-consistent Hartree calculations of the Landau levels for the gated trilayer. The plateau structure in the Hall resistivity determines the stacking order (ABA versus ABC). We find that the IQHE in ABC trilayer graphene is similar to that in the monolayer, except for the absence of a plateau at filling factor v=2. At very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder.

preprint2010arXiv

Dirac Spectrum in Piecewise Constant One-Dimensional Potentials

We study the electronic states of graphene in piecewise constant potentials using the continuum Dirac equation appropriate at low energies, and a transfer matrix method. For superlattice potentials, we identify patterns of induced Dirac points which are present throughout the band structure, and verify for the special case of a particle-hole symmetric potential their presence at zero energy. We also consider the cases of a single trench and a p-n junction embedded in neutral graphene, which are shown to support confined states. An analysis of conductance across these structures demonstrates that these confined states create quantum interference effects which evidence their presence.

preprint2010arXiv

Magnetoelectric coupling, Berry phase, and Landau level dispersion in a biased bilayer graphene

We study the energy spectrum of a graphene bilayer in the presence of transverse electric and magnetic fields. We find that the resulting Landau levels exhibit a nonmonotonic dependence on the electric field, as well as numerous level crossings. This behavior is explained using quasiclassical quantization rules that properly take into account the pseudospin of the quasiparticles. The pseudospin generates the Berry phase, which leads to a shift in energy quantization and results in a pseudo-Zeeman effect. The latter depends on the electric field, alternates in sign among the two valleys, and also reduces the band gap. Analytic formulas for other pseudospin-related quantities, such as the anomalous Hall conductivity, are derived and compared with prior theoretical work.

preprint2010arXiv

Non-local order in gapless systems: Entanglement Spectrum in Spin Chains

We show that the entanglement spectrum can be used to define non-local order in gapless spin systems. We find a gap that fully separates a series of generic, high `entanglement energy' levels, from a flat band of levels with specific multiplicities that uniquely define the ground-state, and remains finite in the thermodynamic limit. We pick the appropriate set of quantum numbers, and then partition the system in this space. This partition corresponds to a very non-local real-space cut. Despite the fact that the Laughlin state is bulk gapped while the antiferromagnetic spin chain state is bulk gapless, we show that the S=1/2 Heisenberg antiferromagnet in one dimension has an entanglement spectrum almost identical to that of the Laughlin Fractional Quantum Hall state in two dimensions, revealing the similar field theory of their low-energy edge and bulk excitations respectively.

preprint2010arXiv

Quasiparticle Interference in the Unconventional Metamagnetic Compound Sr$_3$Ru$_2$O$_7$

Quasiparticle interference (QPI) in spectroscopic imaging scanning tunneling microscopy provides a powerful method to detect orbital band structures and orbital ordering patterns in transition metal oxides. We use the $T$-matrix formalism to calculate the QPI spectra for the unconventional metamagnetic system of Sr$_3$Ru$_2$O$_7$ with a $t_{2g}$-orbital band structure. A detailed tight-binding model is constructed accounting for features such as spin-orbit coupling, bilayer splitting, and the staggered rotation of the RuO octahedra. The band parameters are chosen by fitting the calculated Fermi surfaces with those measured in the angular-resolved photo-emission spectroscopy experiment. The calculated quasiparticle interference at zero magnetic field exhibits a hollow square-like feature arising from the nesting of the quasi-1d $d_{xz}$ and $d_{yz}$ orbital bands, in agreement with recent measurements by J. Lee {\it et al.} (Nature Physics {\bf 5}, 800 (2009)). Rotational symmetry breaking in the nematic metamagnetic state also manifests in the quasi-particle interference spectra.

preprint2008arXiv

Scenario for Fractional Quantum Hall Effect in Bulk Isotropic Materials

We investigate the possibility of a strongly correlated Fractional Quantum Hall (FQH) state in bulk three dimensional isotropic (not layered) materials. We find that a FQH state can exist at low densities only if it is accompanied by a staging transition in which the electrons re-organize themselves in layers, perpendicular to the magnetic field, at distances of order the magnetic length apart. The Hartree energy associated to the staging transition is off-set by the correlation Fock energy of the 3D FQH state. We obtain the phase diagram of bulk electrons in a magnetic field subject to Coulomb interactions as a function of carrier density and lattice constant. At very low densities, the 3D FQH state exhibits a transition to a 3D Wigner crystal state stabilized by phonon correlations.

preprint1995arXiv

Non-linear $I(V)$ Characteristics of Luttinger Liquids and Gated Hall Bars

Non-linear current voltage characteristics of a disordered Luttinger liquid are calculated using a perturbative formalism. One finds non-universal power law characteristics of the form $I(V)\sim V^{1/(2\tilde{g}-1)}$ which is valid both in the superfluid phase when $I$ is small and also in the insulator phase when $I$ is large. Mesoscopic voltage fluctuations are also calculated. One finds $\Var(ΔV) \sim I^{4\tilde{g}-3}$. Both the $I(V)$ characteristic and the voltage fluctuations exhibit universal power law behavior at the superfluid insulator transition where $\tilde{g}=\tot$. The possible application of these results to the non-linear transport properties of gated Hall bars is discussed.