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D. Nasr Esfahani

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Published work

3 published item(s)

preprint2014arXiv

Non-linear response to electric field in extended Hubbard models

The electric-field response of a one-dimensional ring of interacting fermions, where the interactions are described by the extended Hubbard model, is investigated. By using an accurate real-time propagation scheme based on the Chebyshev expansion of the evolution operator, we uncover various non-linear regimes for a range of interaction parameters that allows modeling of metallic and insulating (either charge density wave or spin density wave insulators) rings. The metallic regime appears at the phase boundary between the two insulating phases and provides the opportunity to describe either weakly or strongly correlated metals. We find that the {\it fidelity susceptibility} of the ground state as a function of magnetic flux piercing the ring provides a very good measure of the short-time response. Even completely different interacting regimes behave in a similar manner at short time-scales as long as the fidelity susceptibility is the same. Depending on the strength of the electric field we find various types of responses: persistent currents in the insulating regime, dissipative regime or damped Bloch-like oscillations with varying frequencies or even irregular in nature. Furthermore, we also consider the dimerization of the ring and describe the response of a correlated band insulator. In this case the distribution of the energy levels is more clustered and the Bloch-like oscillations become even more irregular.

preprint2013arXiv

Field effect on surface states in a doped Mott-Insulator thin film

Surface effects of a doped thin film made of a strongly correlated material are investigated both in the absence and presence of a perpendicular electric field. We use an inhomogeneous Gutzwiller approximation for a single band Hubbard model in order to describe correlation effects. For low doping, the bulk value of the quasiparticle weight is recovered exponentially deep into the slab, but with increasing doping, additional Friedel oscillations appear near the surface. We show that the inverse correlation length has a power-law dependence on the doping level. In the presence of an electrical field, considerable changes in the quasiparticle weight can be realized throughout the system. We observe a large difference (as large as five orders of magnitude) in the quasiparticle weight near the opposite sides of the slab. This effect can be significant in switching devices that use the surface states for transport.

preprint2011arXiv

Electrical field induced shift of the Mott Metal-Insulator transition in thin films

The ground state properties of a paramagnetic Mott insulator are investigated in the presence of an external electrical field using the inhomogeneous Gutzwiller approximation for a single band Hubbard model in a slab geometry. The metal insulator transition is shifted towards higher Hubbard repulsions by applying an electric field perpendicular to the slab. The spatial distribution of site dependent quasiparticle weight shows that the quasiparticle weight is maximum in few layers beneath the surface. Moreover only at higher Hubbard repulsion, larger than the bulk critical U, the electric field will be totally screened only for centeral cites. Our results show that by presence of an electric field perpendicular to a thin film made of a strongly correlated material, states near the surface will remain metallic while the bulk becomes insulating after some critical U. In contrast, in the absence of the electric field the surface becomes insulating before the bulk.