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D. Nandi

D. Nandi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.str-el

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Published work

5 published item(s)

preprint2016arXiv

Spin and the Coulomb Gap in the Half-Filled Lowest Landau Level

The Coulomb gap observed in tunneling between parallel two-dimensional electron systems, each at half filling of the lowest Landau level, is found to depend sensitively on the presence of an in-plane magnetic field. Especially at low electron density, the width of the Coulomb gap at first increases sharply with in-plane field, but then abruptly levels off. This behavior appears to coincide with the known transition from partial to complete spin polarization of the half-filled lowest Landau level. The tunneling gap therefore opens a new window onto the spin configuration of two-dimensional electron systems at high magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Tunneling at $ν_T=1$ in Quantum Hall Bilayers

Interlayer tunneling measurements in the strongly correlated bilayer quantized Hall phase at $ν_T=1$ are reported. The maximum, or critical current for tunneling at $ν_T=1$, is shown to be a well-defined global property of the coherent phase, insensitive to extrinsic circuit effects and the precise configuration used to measure it, but also exhibiting a surprising scaling behavior with temperature. Comparisons between the experimentally observed tunneling characteristics and a recent theory are favorable at high temperatures, but not at low temperatures where the tunneling closely resembles the dc Josephson effect. The zero-bias tunneling resistance becomes extremely small at low temperatures, vastly less than that observed at zero magnetic field, but nonetheless remains finite. The temperature dependence of this tunneling resistance is similar to that of the ordinary in-plane resistivity of the quantum Hall phase.

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preprint2012arXiv

Exciton Condensation and Perfect Coulomb Drag

Coulomb drag is a process whereby the repulsive interactions between electrons in spatially separated conductors enable a current flowing in one of the conductors to induce a voltage drop in the other. If the second conductor is part of a closed circuit, a net current will flow in that circuit. The drag current is typically much smaller than the drive current owing to the heavy screening of the Coulomb interaction. There are, however, rare situations in which strong electronic correlations exist between the two conductors. For example, bilayer two-dimensional electron systems can support an exciton condensate consisting of electrons in one layer tightly bound to holes in the other. One thus expects "perfect" drag; a transport current of electrons driven through one layer is accompanied by an equal one of holes in the other. (The electrical currents are therefore opposite in sign.) Here we demonstrate just this effect, taking care to ensure that the electron-hole pairs dominate the transport and that tunneling of charge between the layers is negligible.

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preprint2012arXiv

Exciton Transport in a Bilayer Quantum Hall Superfluid

Bilayer quantum Hall systems at ν=1 support an excitonic ground state. In addition to the usual charged quasiparticles, this system possesses a condensate degree of freedom: exciton transport. Detection of this neutral transport mode is facilitated by the use of the Corbino multiply-connected geometry in which charge transport is suppressed. We here summarize our recent experiments on Corbino devices which directly demonstrate exciton transport across the bulk of the incompressible ν=1 quantum Hall state.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene

The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device configuration. We find that both the zero-magnetic-field transport and the quantum Hall effect at high magnetic fields are distinctly different from the monolayer and bilayer graphenes, and that they show electron-hole asymmetries that are strongly suggestive of a semimetallic band overlap. When the ABA trilayers are subjected to an electric field perpendicular to the sheet, Landau level splittings due to a lifting of the valley degeneracy are clearly observed.

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