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Researcher profile

D. Mencaraglia

D. Mencaraglia contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2013arXiv

Designing III-V Multijunction Solar Cells on Silicon

Single junction Si solar cells dominate photovoltaics but are close to their efficiency limits. This paper presents ideal limiting efficiencies for tandem and triple junction multijunction solar cells subject only to the constraint of the Si bandgap and therefore recommending optimum cell structures departing from the single junction ideal. The use of III-V materials is considered, using a novel growth method capable of yielding low defect density III-V layers on Si. In order to evaluate the real potential of these proposed multijunction designs, a quantitative model is presented, the strength of which is the joint modelling of external quantum efficiency and current-voltage characteristics using the same parameters. The method yields a single parameter fit in terms of the Shockley-Read-Hall lifetime. This model is validated by fitting experimental data of external quantum efficiency, dark current, and conversion efficiency of world record tandem and triple junction cells under terrestrial solar spectra without concentration. We apply this quantitative model to the design of tandem and triple junction solar cells, yielding cell designs capable of reaching efficiencies without concentration of 32% for the best tandem cell and 36% for the best triple junction cell. This demonstrates that efficiencies within a few percent of world records are realistically achievable without the use of concentrating optics, with growth methods being developed for multijunction cells combining III-V and Si materials.

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preprint2013arXiv

Growth Route Toward III-V Multispectral Solar Cells on Silicon

To date, high efficiency multijunction solar cells have been developed on Ge or GaAs substrates for space applications, and terrestrial applications are hampered by high fabrication costs. In order to reduce this cost, we propose a breakthrough technique of III-V compound heteroepitaxy on Si substrates without generation of defects critical to PV applications. With this technique we expect to achieve perfect integration of heterogeneous Ga1-xInxAs micro-crystals on Si substrates. In this paper, we show that this is the case for x=0. GaAs crystals were grown by Epitaxial Lateral Overgrowth on Si (100) wafers covered with a thin SiO2 nanostructured layer. The cristallographic structure of these crystals is analysed by MEB and TEM imaging. Micro-Raman and Micro-Photomuminescence spectra of GaAs crystals grown with different conditions are compared with those of a reference GaAs wafer in order to have more insight on eventual local strains and their cristallinity. This work aims at developping building blocks to further develop a GaAs/Si tandem demonstrator with a potential conversion efficiency of 29.6% under AM1.5G spectrum without concentration, as inferred from our realistic modeling. This paper shows that Epitaxial Lateral Overgrowth has a very interesting potential to develop multijunction solar cells on silicon approaching the today 30.3% world record of a GaInP/GaAs tandem cell under the same illumination conditions, but on a costlier substrate than silicon.

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preprint2010arXiv

Analysis of efficiency limiting processes in thin film Cu(In,Ga)(S,Se)2 electrodeposited solar cells

Electrodeposited thin film cells have been fabricated with record-breaking efficiencies of 11.4%. This presentation examines conversion mechanisms in cells with a focus on the effect of CdS buffer layers using a range of complementary tools. Dark currents (IVs) are well described by series and parallel resistances, and two dominant recombination mechanisms represented by parallel diodes. Measurements of IV as a function of temperature (IVT) allow extraction of activation energies corresponding to these processes and indicate their spatial position. Admittance spectroscopy (AS) gives an independent estimate of the same energies, and yields values of the defect densities of states in the forbidden gap. Two dominant levels are apparent, confirming the validity of the IV analysis. Spectral response (QE) measurements are presented, yielding information on minority carrier collection efficiency. The different methods of parameter extraction are correlated and indicate recombination levels some hundreds of meV above the valence band and below the conduction band. Bias dependence of admittance spectroscopy gives indications on the localisation of defect centres with one defect situated at the CdS heterointerface and the other in the bulk of the depletion region. The dark current analysis indicates that photogenerated minority carrier collection is the limiting factor in these cells at the operating bias.

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