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D. Manessis

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Published work

2 published item(s)

preprint2022arXiv

Multi-functional metasurface architecture for amplitude, polarization and wavefront control

Metasurfaces (MSs) have been utilized to manipulate different properties of electromagnetic waves. By combining local control over the wave amplitude, phase, and polarization into a single tunable structure, a multi-functional and reconfigurable metasurface can be realized, capable of full control over incident radiation. Here, we experimentally validate a multi-functional metasurface architecture for the microwave regime, where in principle variable loads are connected behind the backplane to reconfigurably shape the complex surface impedance. As a proof-of-concept step, we fabricate several metasurface instances with static loads in different configurations (surface mount capacitors and resistors of different values in different connection topologies) to validate the approach and showcase the different achievable functionalities. Specifically, we show perfect absorption for oblique incidence (both polarizations), broadband linear polarization conversion, and beam splitting, demonstrating control over the amplitude, polarization state, and wavefront, respectively. Measurements are performed in the 4-18 GHz range inside an anechoic chamber and show good agreement with theoretically-anticipated results. Our results clearly demonstrate the practical potential of the proposed architecture for reconfigurable electromagnetic wave manipulation.

preprint2012arXiv

Three Dimensionial Surface Modelling: A Novel Analysis Technique for Non-Destructive X-Ray Diffraction Imaging of Semiconductor Die Warpage & Strain in Fully Encapsulated Integrated Circuits

Future complementary metal oxide semiconductor (CMOS) scaling for advanced integrated circuit (IC) technologies may well depend on "More than Moore" (MtM) approaches using heterogeneous integration of semiconductor-based devices. In order to realise this, advanced packaging technologies including System in Package (SiP), System on Chip (SoC) and 3D Integrated Circuits (3D ICs) are key enabling technologies. However, these advanced packages are plagued by reliability problems and to date there is no proven or accepted non-destructive metrology which can simultaneously probe materials properties such as strain, warpage, dislocation generation, etc. in these systems from bare silicon die through to a fully encapsulated packaged system. We report herein on the development of a novel, x-ray diffraction amd analysis technique, which can address this major metrology gap, and we demonstrate the non-destructive production of X-Y spatial maps of deformations and strain fields in Si die inside fully encapsulated integrated circuit packages. The technique, which we call 3-dimensional surface modelling (3DSM), is used to obtain high resolution (~3 μm) strain/warpage maps, and quantitative information on the nature and extent of warpage in a demonstration quad no flat lead (QFN) advanced package running from early stage silicon die bonding through to the end of the manufacturing process, i.e. a fully encapsulated and production ready chip.