Source author record

D. Lim

D. Lim appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
4topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2019arXiv

Assessment of the potential of SiPM-based systems for bioluminescence detection

Bioluminescence detection requires single-photon sensitivity, extremely low detection limits and wide dynamic range. Such performances were traditionally assured by photomultiplier-tubes based systems. However, development of novel applications and industrialisation call for the introduction of more robust, compact and scalable devices. Silicon photomultipliers were recently put forward as the alternative to phototubes for a new generation of flexible and user friendly instruments. In this article, the figures of merit of a silicon-photomultiplier based system relying on a compact, low cost system are investigated. Possible implementations are proposed and a proof-of-principle bioluminescence measurement is performed.

preprint2014arXiv

Photoluminescence Saturation and Exciton Decay Dynamics in Transition Metal Dichalcogenide Monolayers

We report a photoluminescence (PL) and transient reflection spectroscopy study of exciton dynamics in monolayer transition transition-metal dichalcogenides (TMDs). PL saturation in monolayer MoSe2 occurs an excitation intensity more than two orders of magnitude lower than in monolayer MoS2. Transient reflection shows that the nonlinear exciton-exciton annihilation is the dominant exciton decay process in monolayer MoSe2 in contrast to the previously reported linear exciton decay in monolayer MoS2. In addition, the exciton lifetime in MoSe2, > 125 ps, is more than an order of magnitude longer than the several-ps exciton lifetime in MoS2. We find that the dramatically different exciton decay mechanism and PL saturation behavior of MoSe2 and MoS2 monolayers can be explained by the difference in their exciton lifetime.