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Source author record

D. I. Golosov

D. I. Golosov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.mes-hallcond-mat.mtrl-sci

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Published work

7 published item(s)

preprint2020arXiv

An On-Site Density Matrix Description of the Extended Falicov--Kimball Model at Finite Temperatures

We propose a single-site mean-field description, an analogue of Weiss mean-field theory, suitable for narrow-band systems with correlation-induced hybridisation at finite temperatures. Presently this approach, based on the notion of a fluctuating on-site density matrix (OSDM), is developed for the case of extended Falicov-Kimball model (EFKM). In an EFKM, an excitonic insulator phase can be stabilised at zero temperature. With increasing temperature, the excitonic order parameter (interaction-induced hybridisation on-site, characterised by the absolute value and phase) eventually becomes disordered, which involves fluctuations of both its phase and (at higher T) its absolute value. In order to build an adequate finite-temperature description, it is important to clarify the nature of degrees of freedom associated with the phase and absolute value of the induced hybridisation, and correctly account for the corresponding phase-space volume. We show that the OSDM-based treatment of the local fluctuations indeed provides an intuitive and concise description (including the phase-space integration measure). This allows to describe both the lower-temperature regime where phase fluctuations destroy the long-range order, and the higher temperature crossover corresponding to a decrease of the absolute value of hybridisation. In spite of the rapid progress in the studies of excitonic insulators, a unified picture of this kind has not been available to date. We briefly discuss recent experiments on ${\rm Ta_2 Ni Se_5 }$ and also address the amplitude mode of collective excitations in relation to the measurements reported for 1T--${\rm TiSe_2}$. Both the overall scenario and the theoretical framework are also expected to be relevant in other contexts, including the Kondo lattice model.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Stoner Magnetism in an Inversion Layer

Motivated by recent experimental work on magnetic properties of Si-MOSFETs, we report a calculation of magnetisation and susceptibility of electrons in an inversion layer, taking into account the co-ordinate dependence of electron wave function in the direction perpendicular to the plane. It is assumed that the inversion-layer carriers interact via a contact repulsive potential, which is treated at a mean-field level, resulting in a self-consistent change of profile of the wave functions. We find that the results differ significantly from those obtained in the pure 2DEG case (where no provision is made for a quantum motion in the transverse direction). Specifically, the critical value of interaction needed to attain the ferromagnetic (Stoner) instability is decreased and the Stoner criterion is therefore relaxed. This leads to an increased susceptibility and ultimately to a ferromagnetic transition deep in the high-density metallic regime. In the opposite limit of low carrier densities, a phenomenological treatment of the in-plane correlation effects suggests a ferromagnetic instability above the metal-insulator transition. Results are discussed in the context of the available experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Instability of the chiral phase and electronic ferroelectricity in the extended Falicov--Kimball model

We consider a spinless extended Falicov--Kimball model at half-filling, for the case of opposite-parity bands. Within the Hartree--Fock approach, we calculate the excitation energies in the chiral phase, which is a possible mean-field solution in the presence of a hybridisation. It is shown that the chiral phase is unstable. We then briefly review the accumulated results on stability and degeneracies of the excitonic insulator phase. Based on these, we conclude that the presence of both hybridisation and narrow-band hopping is required for electronic ferroelectricity.

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preprint2013arXiv

Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection

We have performed conductivity measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_1 and n_2 across the slot. Dynamic longitudinal resistance was measured by a standard lock-in technique, while maintaining a large DC current through the source-drain channel. We find that in a parallel magnetic field, the resistance of the sample, R(I_DC), is asymmetric with respect to the direction of the DC current. The asymmetry becomes stronger with an increase of either the magnetic field or the difference between n_1 and n_2. These observations are interpreted in terms of the effective spin injection: the degree of spin polarisation is different in the two parts of the sample, implying different magnitudes of spin current away from the slot. The carriers thus leave the excess spin (of the appropriate sign) in the region around the slot, leading to spin accumulation (or depletion) and to the spin drift-diffusion phenomena. Due to the positive magnetoresistance of the two-dimensional electron gas, this change in a local magnetisation affects the resistivity near the slot and the measured net resistance, giving rise to an asymmetric contribution. We further observe that the value of R(I_DC) saturates at large I_DC; we suggest that this is due to electron tunnelling from the two-dimensional n-type layer into the p-type silicon (or into another "spin reservoir") at the slot.

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preprint2012arXiv

Collective Excitations and Stability of the Excitonic Phase in the Extended Falicov--Kimball Model

We consider the excitonic insulator state (often associated with electronic ferroelectricity), which arises on the phase diagram of an extended spinless Falicov--Kimball model (FKM) at half-filling. Within the Hartree--Fock approach, we calculate the spectrum of low-energy collective excitations in this state up to second order in the narrow-band hopping and/or hybridisation. This allows to probe the mean-field stability of the excitonic insulator. The latter is found to be unstable when the case of the pure FKM (no hybridisation with a fully localised band) is approached. The instability is due to the presence of another, lower-lying ground state and not to the degeneracy of the excitonic phase in the pure FKM. The excitonic phase, however, may be stabilised further away from the pure FKM limit. In this case, the low-energy excitation spectrum contains new information about the properties of the excitonic condensate (including the strongly suppressed critical temperature).

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preprint2012arXiv

Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities

Positive magnetoresistance (PMR) of a silicon MOSFET in parallel magnetic fields B has been measured at high electron densities n >> n_c where n_c is the critical density of the metal-insulator transition (MIT). It turns out that the normalized PMR curves, R(B)/R(0), merge together when the field is scaled according to B/B_c(n) where B_c is the field in which electrons become fully spin polarized. The values of B_c have been calculated from the simple equality between the Zeeman splitting energy and the Fermi energy taking into account the experimentally measured dependence of the spin susceptibility on the electron density. This extends the range of validity of the scaling all the way to a deeply metallic regime far away from MIT. The subsequent analysis of PMR for low n >~ n_c demonstrated that the merging of the initial parts of curves can bee achieved only with taking into account the temperature dependence of B_c. It is also shown that the shape of the PMR curves at strong magnetic fields is affected by a crossover from a purely two-dimensional (2D) electron transport to a regime where out-of-plane carrier motion becomes important (quasi-three-dimensional regime).

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preprint2010arXiv

New Correlated Model of Colossal Magnetoresistive Manganese Oxides

A new minimal model is constructed for the doped manganese oxides which exhibit colossal magnetoresistance (CMR), involving broad spin-majority conduction band as well as nearly localised spin-minority electron states. A simple mean field analysis yields a temperature-dependent hybridised band structure with suppressed carrier weight at the Fermi level. Spin stiffness is complex, indicating unusually strong spin wave damping. Experimental and theoretical investigations are needed to further verify the relevance of the proposed model.

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