Researcher profile

D. H. Xie

D. H. Xie contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2015arXiv

Observation of Dirac Cone Band Dispersion in FeSe Thin Films by Photoemission Spectroscopy

The electronic structure of FeSe thin films grown on SrTiO3 substrate is studied by angle-resolved photoemission spectroscopy (ARPES). We reveal the existence of Dirac cone band dispersions in FeSe thin films thicker than 1 Unit Cell below the nematic transition temperature, whose apex are located -10 meV below Fermi energy. The evolution of Dirac cone electronic structure for FeSe thin films as function of temperature, thickness and cobalt doping is systematically studied. The Dirac cones are found to be coexisted with the nematicity in FeSe, disappear when nematicity is suppressed. Our results provide some indication that the spin degrees of freedom may play some kind of role in the nematicity of FeSe.

preprint2015arXiv

Tunable Fe-vacancy disorder-order transition in FeSe thin films

Various Fe-vacancy orders have been reported in tetragonal Fe1-xSe single crystals and nanowires/nanosheets, which are similar to those found in alkali metal intercalated A1-xFe2-ySe2 superconductors. Here we report the in-situ angle-resolved photoemission spectroscopy study of Fe-vacancy disordered and ordered phases in FeSe multi-layer thin films grown by molecular beam epitaxy. Low temperature annealed FeSe films are identified to be Fe-vacancy disordered phase and electron doped. Further long-time low temperature anneal can change the Fe-vacancy disordered phase to ordered phase, which is found to be semiconductor/insulator with (root 5) x (root 5) superstructure and can be reversely changed to disordered phase with high temperature anneal. Our results reveal that the disorder-order transition in FeSe thin films can be simply tuned by vacuum anneal and the (root 5) x (root 5) Fe-vacancy ordered phase is more likely the parent phase of FeSe.