Researcher profile

D. E. Aspnes

D. E. Aspnes contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 15 - Baseline
3works
0followers
5topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2021arXiv

Maximum-Entropy Revisited

For over five decades the procedure termed maximum-entropy (M-E) has been used to sharpen structure in spectra, optical and otherwise. However, this is a contradiction: by modifying data, this approach violates the fundamental M-E principle, which is to extend, in a model-independent way, trends established by low-index Fourier coefficients into the white-noise region. The Burg derivation, and indirectly the prediction-error equations on which sharpening is based, both lead to the correct solution, although this has been consistently overlooked. For a single Lorentzian line these equations can be solved analytically. The resultant lineshape is an exact autoregressive model-1 (AR(1)) replica of the original, demonstrating how the M-E reconstruction extends low-index Fourier coefficients to the digital limit and illustrating why this approach works so well for lineshapes resulting from first-order decay processes. By simultaneously retaining low-index coefficients exactly and eliminating Gibbs oscillations, M-E noise filtering is quantitatively superior to that achieved by any linear method, including the high-performance filters recently proposed. Examples are provided.

preprint2011arXiv

Electrodynamics of surface-enhanced Raman scattering

We examine SERS from two perspectives: as a phenomenon described by the Laplace Equation (the electrostatic or Rayleigh limit) and by the Helmholtz Equation (electrodynamic or Mie limit). We formulate the problem in terms of the scalar potential, which simplifies calculations without introducing approximations. Because scattering is not usually calculated this way, we provide the necessary theoretical justification showing that the scalar-potential description is complete. Additional simplifications result from treating the scatterer as a point charge q instead of a dipole. This allows us to determine the consequences of including the longitudinal (Coulomb) interaction between q and a passive resonator. This interaction suppresses the mathematical singularities that lead to the unphysical resonant infinities in first and second enhancements. It also modifies the effective restoring-force constant of a resonant denominator, which permits us to explore the possibility of dual resonance through a molecular pathway. We apply the formalism to spherical inclusions of radius a for q located at polar and equatorial positions. For small a, of the order of 1 nm or less, the low-l multipole terms are important. For the more relevant case of radii of the order of 10 nm and larger, the q-sphere interaction can be approximated by a model where q interacts with its image charge for a dielectric plane, and the singularity shifts in a discrete manner from ε(ω)=-2 to ε(ω)=-1. These results are supported by more accurate calculations taking retardation into account, although the use of only one spherical-harmonic term does not fully represent the difference between forward- and backscattering.

preprint2010arXiv

Real-time observation of bond-by-bond interface formation during the oxidation of (111) Si

Atomic-level structure of solids is typically determined by techniques such as X-ray and electron diffraction,1, 2, 3, 4 which are sensitive to atomic positions. It is hardly necessary to mention the impact that these techniques have had on almost every field of science. However, the bonds between atoms are critical for determining the overall structure. The dynamics of these bonds have been difficult to quantify. Here, we combine second-harmonic generation and the bond-charge model of nonlinear optics5, 6 to probe, in real time, the dynamics of bond-by-bond chemical changes during the oxidation of H-terminated (111)Si, a surface that has been well characterized by static methods. We thus demonstrate that our approach provides new information about this exhaustively studied system. For example, oxidation is activated by a surprisingly small applied macroscopic strain, and exhibits anisotropic kinetics with one of the three equivalent back-bonds of on-axis samples reacting differently from the other two. Anisotropic oxidation kinetics also leads to observed transient changes in bond directions. By comparing results for surfaces strained in different directions, we find that in-plane control of surface chemistry is possible. The use of nonlinear optics as a bond-specific characterization tool is readily adaptable for studying structural and chemical dynamics in many other condensed-matter systems.