Researcher profile

D. Bimberg

D. Bimberg contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2010arXiv

Finite Element Simulation of the Optical Modes of Semiconductor Lasers

In the present article we investigate optical near fields in semiconductor lasers. We perform finite element simulations for two different laser types, namely a super large optical waveguide (SLOW) laser, which is an edge emitter, and a vertical cavity surface emitting laser (VCSEL). We give the mathematical formulation of the different eigenvalue problems that arise for our examples and explain their numerical solution with the finite element method. Thereby, we also comment on the usage of transparent boundary conditions, which have to be applied to respect the exterior environment, e.g., the very large substrate and surrounding air. For the SLOW laser we compare the computed near fields to experimental data for different design parameters of the device. For the VCSEL example a comparison to simplified 1D mode calculations is carried out.

preprint2010arXiv

Optical imaging of resonant electrical carrier injection into individual quantum dots

We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant tunneling of electrons and holes into the QDs at bias voltages below the flat-band condition leads to sharp EL lines characteristic of individual QDs, accompanied by a spatial fragmentation of the surface EL emission into small and discrete light- emitting areas, each with its own spectral fingerprint and Stark shift. We explain this behavior in terms of Coulomb interaction effects and the selective excitation of a small number of QDs within the ensemble due to preferential resonant tunneling paths for carriers.