Source author record

D. Balamurugan

D. Balamurugan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
4topics
2close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2011arXiv

Multiscale Simulation of Quantum Nanosystems: Plasmonics of Silver Particles

Quantum nanosystems involve the coupled dynamics of fermions or bosons across multiple scales in space and time. Examples include quantum dots, superconducting or magnetic nanoparticles, molecular wires, and graphene nanoribbons. The number (10^3 to 10^9) of electrons in assemblies of interest here presents a challenge for traditional quantum computations. However, results from deductive multiscale analysis yield coarse-grained wave equation that capture the longer-scale quantum dynamics of these systems; a companion short-scale equation is also developed that allows for the construction of effective masses and interactions involved in the coarse-grained wave equation. The theory suggest an efficient algorithm for simulating quantum nanosystem which is implemented here. A variational Monte Carlo method is used to simulate the co-evolution of long- and short-scale processes. The approach does not require experimental data for calibration. It is validated via experimental data and TDDFT predictions on the nanoparticle size dependence of the plasmon spectrum.

preprint2006arXiv

Charge-induced effects on the structure and properties of silane and disilane derivatives

Using ab-initio electronic structure methods we have investigated the ground state structures and properties of neutral and charged SiH$_{m}$(m=1-4) and Si$_{2}$H$_{n}$(n=1-6) clusters which are produced in the plasma enhanced chemical vapor deposition process used in the preparation of hydrogenated amorphous silicon({\it{a}}-Si:H). Our results show that charging a neutral cluster distorts it and the distortion mainly occurs through the orientation of Si-H bond. We attribute structural changes in the charged clusters to electrostatic repulsion between the bonded and non-bonded electrons. We find that in addition to the usual Si-H bond, hydrogen atoms form Si-H-H and Si-H-Si bonds in some clusters. The vibrations of Si-H, Si-Si, Si-H-Si bond stretching modes show that the frequencies are shifted significantly upon charging. The frequency shifts in the charged clusters are consistent with their bond length variations. We discuss the fragmentation pathways of silane into binary products and the role of fragmented silane radicals in the cluster formation and {\it{a}}-Si:H film deposition process.